Room‐Temperature Nonvolatile Memory Based on a Single‐Phase Multiferroic Hexaferrite

• Published in: Advanced functional materials Vol. 28; no. 9
• Main Authors: Zhai, Kun, Shang, Da‐Shan, Chai, Yi‐Sheng, Li, Gang, Cai, Jian‐Wang, Shen, Bao‐Gen, Sun, Young
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 28.02.2018
• Subjects: Computer memory; Coupling; Data storage; Electric polarization; Ferroelectric materials; Ferroelectricity; Ferromagnetism; Heterostructures; hexaferrites; Magnetization; magnetoelectric; Materials science; Memory devices; Multiferroic materials; multiferroics; nonvolatile memory; Random access memory; Room temperature

The cross‐coupling between electric polarization and magnetization in multiferroic materials provides a great potential for creating next‐generation memory devices. Current studies on magnetoelectric (ME) applications mainly focus on ferromagnetic/ferroelectric heterostructures because single‐phase...