Narrowband ultraviolet field-emission device using Gd-doped AlN

We developed mercury-free narrow-band deep-ultraviolet luminescence devices which were accomplished by performing field-emission excitation of Al1−xGdxN. The narrow band emission is a typical feature of the intra-orbital electron transition in the rare-earth Gd3+ ions. AlN, GdN and Al1−xGdxN thin fi...

Full description

Saved in:
Bibliographic Details
Published inIOP conference series. Materials Science and Engineering Vol. 1; no. 1; pp. 012001 - 8
Main Authors Kitayama, Shinya, Kita, Takashi, Kawamura, Masashi, Wada, Osamu, Chigi, Yoshitaka, Kasai, Yoshihiro, Nishimoto, Tetsuro, Tanaka, Hiroyuki, Kobayashi, Mikihiro
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2009
Subjects
Electron transitions
Emission
Fused silica
Gadolinium
Luminescence
Narrowband
Rare earth elements
Silicon dioxide
Substrates
Thin films
Online AccessGet full text

Cover

More Information
Summary:We developed mercury-free narrow-band deep-ultraviolet luminescence devices which were accomplished by performing field-emission excitation of Al1−xGdxN. The narrow band emission is a typical feature of the intra-orbital electron transition in the rare-earth Gd3+ ions. AlN, GdN and Al1−xGdxN thin films were grown on fused silica substrates by using the reactive sputtering technique. A resolution limited, narrow band luminescence line from Gd3+ ions has been observed around 315 nm. Detailed luminescence characteristics depending on the GdN mole fraction and the growth temperature have been investigated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1757-899X
1757-8981
1757-899X
DOI:10.1088/1757-8981/1/1/012001