Noise characteristics of InGaP-gated PHEMTs under high current and thermal accelerated stresses

• Published in: IEEE transactions on electron devices Vol. 52; no. 8; pp. 1706 - 1712
• Main Authors: HUANG, Hou-Kuei, WANG, Chou-Sheng, CHANG, Chieh-Ping, WANG, Yeong-Her, WU, Chang-Luen, CHANG, Chian-Sern
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Devices; Diodes; Direct current; Electronics; Exact sciences and technology; Gallium arsenide; Gallium compounds; Gates; Impact ionization; Indium compounds; InGaP; Life estimation; Low noise; Microelectronic fabrication (materials and surfaces technology); MODFETs; Noise; pseudomorphic high-electron mobility transistors (PHEMTs); reliability; Semiconductor device noise; Semiconductor device reliability; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stresses; Thermal stresses; Transistors; Thermal stress; High strength current; Noise figure; Voltage current curve; Low noise circuit; Power gain; InGaP; Impact phenomena; pseudomorphic high-electron mobility transistors (PHEMTs); MOCVD; High electron mobility transistor; Microelectronic fabrication; Direct current; noise; Capacitance; Pseudomorphic transistor; Schottky barrier diode; Reliability; Transconductance; Thermal variation; Electrical characteristic; Damaging

The degradation mechanisms of the noise characteristics of InGaP-gated low-noise pseudomorphic high-electron mobility transistors (PHEMTs) under accelerated stresses through dc and thermal stresses are investigated. The devices used were metal-organic chemical vapor deposition-grown In/sub 0.49/Ga/s...