Noise characteristics of InGaP-gated PHEMTs under high current and thermal accelerated stresses
The degradation mechanisms of the noise characteristics of InGaP-gated low-noise pseudomorphic high-electron mobility transistors (PHEMTs) under accelerated stresses through dc and thermal stresses are investigated. The devices used were metal-organic chemical vapor deposition-grown In/sub 0.49/Ga/s...
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Published in | IEEE transactions on electron devices Vol. 52; no. 8; pp. 1706 - 1712 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.08.2005
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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