Hydrogen and helium bubbles in silicon

• Published in: Materials science & engineering. R, Reports : a review journal Vol. 27; no. 1; pp. 1 - 52
• Main Authors: Cerofolini, G.F., Corni, F., Frabboni, S., Nobili, C., Ottaviani, G., Tonini, R.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 14.04.2000; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defect-impurity interactions; Defects and impurities in crystals; microstructure; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Helium; Hydrogen; Outdiffusion; Physics; Precipitation; Silicon; Structure of solids and liquids; crystallography; Defect-impurity interactions; Outdiffusion; Precipitation; Silicon; Helium; Hydrogen; Voids; Impurity-defect interactions; Helium additions; Bubbles; Ion implantation; Reviews; Vacancies; Impurities; Hydrogen additions; Interstitials; Codoping

Hydrogen is a quite common impurity in semiconductor-silicon technology: it is unintentionally but unavoidably added to the silicon after crystal growth during wafer processing, and continues to be present during wet oxidation, film depositions, etching and annealing steps. The effects of hydrogen i...