Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

• Published in: Nature electronics Vol. 3; no. 3; pp. 141 - 147
• Main Authors: Qin, Jing-Kai, Liao, Pai-Ying, Si, Mengwei, Gao, Shiyuan, Qiu, Gang, Jian, Jie, Wang, Qingxiao, Zhang, Si-Qi, Huang, Shouyuan, Charnas, Adam, Wang, Yixiu, Kim, Moon J, Wu, Wenzhuo, Xu, Xianfan, Wang, Hai-Yan, Yang, Li, Khin Yap, Yoke, Ye, Peide D
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group 01.03.2020
• Subjects: Atomic properties; Boron nitride; Carbon nanotubes; Carrying capacity; Diameters; Electrons; Encapsulation; Field effect transistors; Nanowires; Physical properties; Semiconductor devices; Silicon dioxide; Spectrum analysis; Symmetry; Tellurium; Transport properties

Tellurium can form nanowires of helical atomic chains. With their unique one-dimensional van der Waals structure, these nanowires are expected to show physical and electronic properties that are remarkably different from those of bulk tellurium. Here, we show that few-chain and single-chain van der...