The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

• Published in: Computational materials science Vol. 167; pp. 143 - 150
• Main Authors: Zhou, Y., Zhang, Y.K., Yang, Q., Jiang, J., Fan, P., Liao, M., Zhou, Y.C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.09.2019
• Subjects: Ferroelectric film; First-principle; Hafnium oxide; Oxygen vacancies; Hafnium oxide; Oxygen vacancies; First-principle; Ferroelectric film

[Display omitted] The newly discovered hafnium oxide (HfO2)-based ferroelectric film shows many advantages over the traditional perovskite films in the application of information storage. However, the mechanism of ferroelectric phase transition of the HfO2-based film is still confusing to the resear...