APA (7th ed.) Citation

Zhou, Y., Zhang, Y., Yang, Q., Jiang, J., Fan, P., Liao, M., & Zhou, Y. (2019). The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle. Computational materials science, 167, 143-150. https://doi.org/10.1016/j.commatsci.2019.05.041

Chicago Style (17th ed.) Citation

Zhou, Y., Y.K Zhang, Q. Yang, J. Jiang, P. Fan, M. Liao, and Y.C Zhou. "The Effects of Oxygen Vacancies on Ferroelectric Phase Transition of HfO2-based Thin Film from First-principle." Computational Materials Science 167 (2019): 143-150. https://doi.org/10.1016/j.commatsci.2019.05.041.

MLA (9th ed.) Citation

Zhou, Y., et al. "The Effects of Oxygen Vacancies on Ferroelectric Phase Transition of HfO2-based Thin Film from First-principle." Computational Materials Science, vol. 167, 2019, pp. 143-150, https://doi.org/10.1016/j.commatsci.2019.05.041.