Quantum Confinement Effect of Amorphous GaN Quantum Dots Prepared by Pulsed-Laser Ablation
Amorphous GaN quantum dots (a-GaN QDs) smaller than the Bohr radius (11 nm) were successfully fabricated at room temperature by a laser ablation using a highly densified GaN target. The mean particle size of the a-GaN QDs was 7.9 nm for the films deposited at the Ar pressure of 50 Pa, 5.2 nm at 100...
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Published in | Japanese Journal of Applied Physics Vol. 44; no. 1S; p. 788 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
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01.01.2005
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Abstract | Amorphous GaN quantum dots (a-GaN QDs) smaller than the Bohr radius (11 nm) were successfully fabricated at room temperature by a laser ablation using a highly densified GaN target. The mean particle size of the a-GaN QDs was 7.9 nm for the films deposited at the Ar pressure of 50 Pa, 5.2 nm at 100 Pa and 4.4 nm at 200 Pa. In particular, the room temperature photoluminescence (PL) and absorption spectra revealed that the a-GaN QDs fabricated under the Ar pressures of 100 and 200 Pa exhibited a strong emission band centered at 3.9 eV, which is about 0.5 eV blue-shifted from the band gap energy of the bulk GaN crystal, confirming the quantum confinement effect. |
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AbstractList | Amorphous GaN quantum dots (a-GaN QDs) smaller than the Bohr radius (11 nm) were successfully fabricated at room temperature by a laser ablation using a highly densified GaN target. The mean particle size of the a-GaN QDs was 7.9 nm for the films deposited at the Ar pressure of 50 Pa, 5.2 nm at 100 Pa and 4.4 nm at 200 Pa. In particular, the room temperature photoluminescence (PL) and absorption spectra revealed that the a-GaN QDs fabricated under the Ar pressures of 100 and 200 Pa exhibited a strong emission band centered at 3.9 eV, which is about 0.5 eV blue-shifted from the band gap energy of the bulk GaN crystal, confirming the quantum confinement effect. |
Author | Shim, Seung Hwan Kwon, Young-Soo Shim, Kwang Bo Koshizaki, Naoto Yoon, Jong-Won |
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Cites_doi | 10.1143/JJAP.30.L1998 10.1007/PL00021126 10.1103/PhysRevLett.79.677 10.1063/1.116662 10.1063/1.118019 10.1063/1.1482416 10.1016/0022-3093(95)00675-3 10.1063/1.123819 10.1063/1.124648 10.1021/cm00051a012 10.1063/1.1345800 10.1063/1.122098 10.1021/cm9705193 10.1111/j.1151-2916.1996.tb08977.x 10.1103/PhysRevLett.86.1355 10.1080/00018738100101417 10.1063/1.108746 10.1063/1.119109 10.1063/1.116913 10.1016/S0009-2614(01)01393-8 10.1016/S0921-5107(98)00377-8 10.1063/1.1311595 10.1016/0368-2048(73)80049-0 |
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References | (crKey-10.1143/JJAP.44.788-BIB10) 2000; 77 (crKey-10.1143/JJAP.44.788-BIB1) 1991; 30 (crKey-10.1143/JJAP.44.788-BIB2) 1996; 69 (crKey-10.1143/JJAP.44.788-BIB9) 2000; 71 (crKey-10.1143/JJAP.44.788-BIB20) 1999; 74 (crKey-10.1143/JJAP.44.788-BIB22) 1973; 2 (crKey-10.1143/JJAP.44.788-BIB13) 1996; 79 (crKey-10.1143/JJAP.44.788-BIB21) 1994 (crKey-10.1143/JJAP.44.788-BIB7) 2002; 80 (crKey-10.1143/JJAP.44.788-BIB8) 1997; 70 (crKey-10.1143/JJAP.44.788-BIB23) 2002; 351 (crKey-10.1143/JJAP.44.788-BIB3) 1996; 68 (crKey-10.1143/JJAP.44.788-BIB15) 1993; 62 (crKey-10.1143/JJAP.44.788-BIB24) 2001; 78 (crKey-10.1143/JJAP.44.788-BIB14) 1995; 7 (crKey-10.1143/JJAP.44.788-BIB19) 1996; 198–200 (crKey-10.1143/JJAP.44.788-BIB17) 2001; 86 (crKey-10.1143/JJAP.44.788-BIB18) 1997; 79 (crKey-10.1143/JJAP.44.788-BIB5) 1996; 69 (crKey-10.1143/JJAP.44.788-BIB12) 1999; 59 (crKey-10.1143/JJAP.44.788-BIB4) 1999; 75 (crKey-10.1143/JJAP.44.788-BIB6) 1997; 9 (crKey-10.1143/JJAP.44.788-BIB11) 1998; 73 (crKey-10.1143/JJAP.44.788-BIB16) 1981; 30 |
References_xml | – volume: 30 start-page: L1998 year: 1991 ident: crKey-10.1143/JJAP.44.788-BIB1 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.30.L1998 – volume: 71 start-page: 229 year: 2000 ident: crKey-10.1143/JJAP.44.788-BIB9 publication-title: Appl. Phys. A doi: 10.1007/PL00021126 – volume: 79 start-page: 677 year: 1997 ident: crKey-10.1143/JJAP.44.788-BIB18 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.79.677 – volume: 68 start-page: 1772 year: 1996 ident: crKey-10.1143/JJAP.44.788-BIB3 publication-title: Appl. Phys. Lett. doi: 10.1063/1.116662 – volume: 69 start-page: 3230 year: 1996 ident: crKey-10.1143/JJAP.44.788-BIB5 publication-title: Appl. Phys. Lett. doi: 10.1063/1.118019 – volume: 80 start-page: 3937 year: 2002 ident: crKey-10.1143/JJAP.44.788-BIB7 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1482416 – volume: 198–200 start-page: 174 year: 1996 ident: crKey-10.1143/JJAP.44.788-BIB19 publication-title: J. Non-Cryst. Solids doi: 10.1016/0022-3093(95)00675-3 – volume: 74 start-page: 2262 year: 1999 ident: crKey-10.1143/JJAP.44.788-BIB20 publication-title: Appl. Phys. Lett. doi: 10.1063/1.123819 – volume: 75 start-page: 1222 year: 1999 ident: crKey-10.1143/JJAP.44.788-BIB4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.124648 – volume: 7 start-page: 517 year: 1995 ident: crKey-10.1143/JJAP.44.788-BIB14 publication-title: Chem. Mater. doi: 10.1021/cm00051a012 – volume: 78 start-page: 619 year: 2001 ident: crKey-10.1143/JJAP.44.788-BIB24 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1345800 – volume: 73 start-page: 1104 year: 1998 ident: crKey-10.1143/JJAP.44.788-BIB11 publication-title: Appl. Phys. Lett. doi: 10.1063/1.122098 – volume: 9 start-page: 2671 year: 1997 ident: crKey-10.1143/JJAP.44.788-BIB6 publication-title: Chem. Mater. doi: 10.1021/cm9705193 – volume: 79 start-page: 2309 year: 1996 ident: crKey-10.1143/JJAP.44.788-BIB13 publication-title: J. Am. Ceram. Soc. doi: 10.1111/j.1151-2916.1996.tb08977.x – volume: 86 start-page: 1355 year: 2001 ident: crKey-10.1143/JJAP.44.788-BIB17 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.86.1355 – volume: 30 start-page: 593 year: 1981 ident: crKey-10.1143/JJAP.44.788-BIB16 publication-title: Adv. Phys. doi: 10.1080/00018738100101417 – volume: 62 start-page: 1242 year: 1993 ident: crKey-10.1143/JJAP.44.788-BIB15 publication-title: Appl. Phys. Lett. doi: 10.1063/1.108746 – volume: 70 start-page: 3122 year: 1997 ident: crKey-10.1143/JJAP.44.788-BIB8 publication-title: Appl. Phys. Lett. doi: 10.1063/1.119109 – volume: 69 start-page: 1477 year: 1996 ident: crKey-10.1143/JJAP.44.788-BIB2 publication-title: Appl. Phys. Lett. doi: 10.1063/1.116913 – volume: 351 start-page: 229 year: 2002 ident: crKey-10.1143/JJAP.44.788-BIB23 publication-title: Chem. Phys. Lett. doi: 10.1016/S0009-2614(01)01393-8 – volume: 59 start-page: 330 year: 1999 ident: crKey-10.1143/JJAP.44.788-BIB12 publication-title: Mater. Sci. Eng. B doi: 10.1016/S0921-5107(98)00377-8 – year: 1994 ident: crKey-10.1143/JJAP.44.788-BIB21 – volume: 77 start-page: 1861 year: 2000 ident: crKey-10.1143/JJAP.44.788-BIB10 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1311595 – volume: 2 start-page: 75 year: 1973 ident: crKey-10.1143/JJAP.44.788-BIB22 publication-title: J. Electron Spectrosc. Relat. Phenom. doi: 10.1016/0368-2048(73)80049-0 |
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