Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys
Using spectroscopic ellipsometry measurements on GaP 1− x Bi x /GaP epitaxial layers up to x = 3.7% we observe a giant bowing of the direct band gap ( E g Γ ) and valence band spin-orbit splitting energy (Δ SO ). E g Γ (Δ SO ) is measured to decrease (increase) by approximately 200 meV (240 meV) wi...
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| Published in | Scientific reports Vol. 9; no. 1; p. 6835 |
|---|---|
| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
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London
Nature Publishing Group UK
02.05.2019
Nature Publishing Group |
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| Abstract | Using spectroscopic ellipsometry measurements on GaP
1−
x
Bi
x
/GaP epitaxial layers up to
x
= 3.7% we observe a giant bowing of the direct band gap (
E
g
Γ
) and valence band spin-orbit splitting energy (Δ
SO
).
E
g
Γ
(Δ
SO
) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in Δ
SO
in going from GaP to GaP
0.99
Bi
0.01
. The evolution of
E
g
Γ
and Δ
SO
with
x
is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of
E
g
Γ
and Δ
SO
with
x
. In contrast to the well-studied GaAs
1−
x
Bi
x
alloy
,
in GaP
1−
x
Bi
x
substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of
E
g
Γ
and Δ
SO
and in particular for the giant bowing observed for
x
≲ 1%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP
1−
x
Bi
x
alloy band structure. |
|---|---|
| AbstractList | Using spectroscopic ellipsometry measurements on GaP
1−
x
Bi
x
/GaP epitaxial layers up to
x
= 3.7% we observe a giant bowing of the direct band gap (
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\begin{document}$${E}_{g}^{{\rm{\Gamma }}}$$\end{document}
E
g
Γ
) and valence band spin-orbit splitting energy (Δ
SO
).
\documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
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\begin{document}$${E}_{g}^{{\rm{\Gamma }}}$$\end{document}
E
g
Γ
(Δ
SO
) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in Δ
SO
in going from GaP to GaP
0.99
Bi
0.01
. The evolution of
\documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
\usepackage{upgreek}
\setlength{\oddsidemargin}{-69pt}
\begin{document}$${E}_{g}^{{\rm{\Gamma }}}$$\end{document}
E
g
Γ
and Δ
SO
with
x
is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of
\documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
\usepackage{upgreek}
\setlength{\oddsidemargin}{-69pt}
\begin{document}$${E}_{g}^{{\rm{\Gamma }}}$$\end{document}
E
g
Γ
and Δ
SO
with
x
. In contrast to the well-studied GaAs
1−
x
Bi
x
alloy
,
in GaP
1−
x
Bi
x
substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of
\documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
\usepackage{upgreek}
\setlength{\oddsidemargin}{-69pt}
\begin{document}$${E}_{g}^{{\rm{\Gamma }}}$$\end{document}
E
g
Γ
and Δ
SO
and in particular for the giant bowing observed for
x
≲ 1%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP
1−
x
Bi
x
alloy band structure. Using spectroscopic ellipsometry measurements on GaP 1− x Bi x /GaP epitaxial layers up to x = 3.7% we observe a giant bowing of the direct band gap ( E g Γ ) and valence band spin-orbit splitting energy (Δ SO ). E g Γ (Δ SO ) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in Δ SO in going from GaP to GaP 0.99 Bi 0.01 . The evolution of E g Γ and Δ SO with x is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of E g Γ and Δ SO with x . In contrast to the well-studied GaAs 1− x Bi x alloy , in GaP 1− x Bi x substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of E g Γ and Δ SO and in particular for the giant bowing observed for x ≲ 1%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP 1− x Bi x alloy band structure. Abstract Using spectroscopic ellipsometry measurements on GaP 1− x Bi x /GaP epitaxial layers up to x = 3.7% we observe a giant bowing of the direct band gap ( $${E}_{g}^{{\rm{\Gamma }}}$$ E g Γ ) and valence band spin-orbit splitting energy (Δ SO ). $${E}_{g}^{{\rm{\Gamma }}}$$ E g Γ (Δ SO ) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in Δ SO in going from GaP to GaP 0.99 Bi 0.01 . The evolution of $${E}_{g}^{{\rm{\Gamma }}}$$ E g Γ and Δ SO with x is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of $${E}_{g}^{{\rm{\Gamma }}}$$ E g Γ and Δ SO with x . In contrast to the well-studied GaAs 1− x Bi x alloy , in GaP 1− x Bi x substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of $${E}_{g}^{{\rm{\Gamma }}}$$ E g Γ and Δ SO and in particular for the giant bowing observed for x ≲ 1%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP 1− x Bi x alloy band structure. Using spectroscopic ellipsometry measurements on GaP1−xBix/GaP epitaxial layers up to x = 3.7% we observe a giant bowing of the direct band gap (EgΓ) and valence band spin-orbit splitting energy (ΔSO). EgΓ (ΔSO) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in ΔSO in going from GaP to GaP0.99Bi0.01. The evolution of EgΓ and ΔSO with x is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of EgΓ and ΔSO with x. In contrast to the well-studied GaAs1−xBix alloy, in GaP1−xBix substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of EgΓ and ΔSO and in particular for the giant bowing observed for x ≲ 1%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP1−xBix alloy band structure. |
| ArticleNumber | 6835 |
| Author | Sweeney, Stephen J. Nattermann, Lukas Bushell, Zoe L. Rorison, Judy M. Broderick, Christopher A. Volz, Kerstin Joseph, Rita Keddie, Joseph L. |
| Author_xml | – sequence: 1 givenname: Zoe L. orcidid: 0000-0002-7353-2847 surname: Bushell fullname: Bushell, Zoe L. organization: Advanced Technology Institute and Department of Physics, University of Surrey – sequence: 2 givenname: Christopher A. orcidid: 0000-0002-5370-7582 surname: Broderick fullname: Broderick, Christopher A. email: c.broderick@umail.ucc.ie organization: Tyndall National Institute, Lee Maltings, Dyke Parade, Department of Electrical and Electronic Engineering, University of Bristol – sequence: 3 givenname: Lukas surname: Nattermann fullname: Nattermann, Lukas organization: Materials Science Center and Faculty of Physics, Philipps-Universität Marburg – sequence: 4 givenname: Rita surname: Joseph fullname: Joseph, Rita organization: Advanced Technology Institute and Department of Physics, University of Surrey – sequence: 5 givenname: Joseph L. surname: Keddie fullname: Keddie, Joseph L. organization: Advanced Technology Institute and Department of Physics, University of Surrey – sequence: 6 givenname: Judy M. surname: Rorison fullname: Rorison, Judy M. organization: Department of Electrical and Electronic Engineering, University of Bristol – sequence: 7 givenname: Kerstin surname: Volz fullname: Volz, Kerstin organization: Materials Science Center and Faculty of Physics, Philipps-Universität Marburg – sequence: 8 givenname: Stephen J. surname: Sweeney fullname: Sweeney, Stephen J. email: s.sweeney@surrey.ac.uk organization: Advanced Technology Institute and Department of Physics, University of Surrey |
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| Cites_doi | 10.1088/0022-3727/47/34/345103 10.1103/PhysRevB.70.035212 10.1088/0268-1242/27/9/094011 10.1143/JJAP.42.371 10.1016/j.mssp.2015.06.065 10.1021/acsphotonics.7b00240 10.1063/1.5006974 10.1016/j.apmt.2016.09.018 10.1063/1.1754592 10.1063/1.126597 10.1103/PhysRevB.39.1871 10.1063/1.1581983 10.1103/PhysRevB.75.045203 10.1063/1.4837615 10.1016/j.jcrysgro.2017.02.021 10.1088/0268-1242/30/9/094001 10.1109/LPT.2012.2225420 10.1088/0268-1242/28/12/125025 10.1063/1.4812660 10.1103/PhysRevLett.97.067205 10.1063/1.4873403 10.7567/APEX.8.061202 10.1103/PhysRevB.71.155201 10.1109/NUSOD.2016.7547020 10.1016/j.jcrysgro.2017.04.005 10.1088/1361-6641/aad2bd 10.7567/APEX.7.082101 10.7567/JJAP.55.108002 10.1063/1.346291 10.1088/0268-1242/30/9/094009 10.1103/PhysRevB.84.245202 10.1103/PhysRevB.90.165203 10.1109/2944.640627 10.1063/1.4895116 10.1103/PhysRevB.82.193204 10.1063/1.119158 10.1109/JSTQE.2015.2448652 10.1016/j.cap.2015.11.019 10.1063/1.4811736 10.1103/PhysRevB.72.073203 10.1103/PhysRevB.65.241303 10.1088/0268-1242/6/1/005 10.1007/978-1-4614-8121-8 10.1063/1.4728028 10.1063/1.1368156 10.1109/ICTON.2011.5970829 10.1002/9780470060193 10.1049/el.2014.1741 10.1063/1.4940201 10.1088/0268-1242/24/3/033001 10.1103/PhysRevB.65.115203 10.1063/1.4768532 10.1063/1.4781415 10.1103/PhysRevB.64.115208 10.1063/1.4932122 10.1038/srep28863 10.1088/0268-1242/30/9/094010 10.1063/1.4761996 10.1103/PhysRevB.92.241201 10.1103/PhysRevB.62.4493 10.1088/1361-6641/aa729b 10.1063/1.3624927 10.1103/PhysRevLett.82.1221 10.1063/1.4789624 10.1103/PhysRevB.87.115104 10.1109/PVSC.2016.7749791 10.1103/PhysRevB.74.241202 10.1109/JSTQE.2017.2719403 |
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| References | Van de WalleCGBand lineups and deformation potentials in the model-solid theoryPhys. Rev. B19893918711989PhRvB..39.1871V10.1103/PhysRevB.39.1871 Wang, C. et al. Molecular beam epitaxy growth of AlAs1−xBix. Semicond. Sci. Technol. in press (2018). MarkoIPPhysical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% BiJ. Phys. D: Appl. Phys.20144734510310.1088/0022-3727/47/34/345103 DongmoPEnhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAsJ. Appl. Phys.20121120937102012JAP...112i3710D10.1063/1.4761996 MarkoIPTemperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applicationsAppl. Phys. Lett.20121012211082012ApPhL.101v1108M10.1063/1.4768532 ZhangYFluegelBMascarenhasAXinHPTuCWOptical transitions in the isoelectronically doped semiconductor GaP:N: an evolution from isolated centers, pairs, and clusters to an impurity bandPhys. Rev. B20006244932000PhRvB..62.4493Z1:CAS:528:DC%2BD3cXls1Wrsbg%3D10.1103/PhysRevB.62.4493 MarkoIPSweeneySJProgress towards III-V bismide alloys for near- and mid-infrared laser diodesIEEE J. Sel. Topics Quantum Electron.201723150151210.1109/JSTQE.2017.2719403 SweeneySJJinSRBismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infraredJ. Appl. Phys.20131130431102013JAP...113d3110S10.1063/1.4789624 KimHGuanYForghaniKKeuchTFMawstLJLaser diodes employing GaAs1−xBix/GaAs1−yPy quantum well active regionsSemicond. Sci. Technol.2017320750072017SeScT..32g5007K10.1088/1361-6641/aa729b ZhangYMascarenhasAWangL-WSimilar and dissimilar aspects of III-V semiconductors containing Bi versus NPhys. Rev. B2005711552012005PhRvB..71o5201Z10.1103/PhysRevB.71.155201 WuX1.142 mm GaAsBi/GaAs quantum well lasers grown by molecular beam epitaxyACS Photonics2017413221:CAS:528:DC%2BC2sXpt1Siurs%3D10.1021/acsphotonics.7b00240 BroderickCAXiongWSweeneySJO’ReillyEPRorisonJMTheory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substratesSemicond. Sci. Technol.2018330940072018SeScT..33i4007B10.1088/1361-6641/aad2bd CarrierPWeiS-HCalculated spin-orbit splitting of all diamondlike and zinc-blende semiconductors: Effects of p1/2 local orbitals and chemical trendsPhys. Rev. B2004700352122004PhRvB..70c5212C10.1103/PhysRevB.70.035212 NattermannLMOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applicationsApplied Materials Today20165209339037910.1016/j.apmt.2016.09.018 LiebichSLaser operation of Ga(NAsP) lattice-matched to (001) silicon substrateAppl. Phys. Lett.2011990711092011ApPhL..99g1109L10.1063/1.3624927 GüngerichMExperimental and theoretical investigation of the conduction band edge of GaNxP1−xPhys. Rev. B2006742412022006PhRvB..74x1202G10.1103/PhysRevB.74.241202 BroderickCAUsmanMSweeneySJO’ReillyEPBand engineering in dilute nitride and bismide semiconductor lasersSemicond. Sci. Technol.2012270940112012SeScT..27i4011B10.1088/0268-1242/27/9/094011 MazzucatoSElectron spin dynamics and g-factor in GaAsBiAppl. Phys. Lett.20131022521072013ApPhL.102y2107M10.1063/1.4812660 ForghaniKGaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAsAppl. Phys. Lett.20141051111012014ApPhL.105k1101F10.1063/1.4895116 VurgaftmanIMeyerJRRam-MohanLRBand parameters for III-V compound semiconductors and their alloysJ. Appl. Phys.20018958152001JAP....89.5815V1:CAS:528:DC%2BD3MXkt1Wrt74%3D10.1063/1.1368156 AlayaRMbarkiMRebeyAPostnikovAVAb initio predictions of structure preferences and band gap character in ordered AlAs1−xBix alloysCurr. Appl. Phys.2016162882016CAP....16..288A10.1016/j.cap.2015.11.019 ChristianTMFluegelBBeatonDAAlberiKMascarenhasABismuth-induced raman modes in GaP1−xBixJpn. J. Appl. Phys.2016551080022016JaJAP..55j8002C10.7567/JJAP.55.108002 NattermannLLudewigPSterzerEVolzKExploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPEJ. Cryst. Growth2017470152017JCrGr.470...15N1:CAS:528:DC%2BC2sXmtVGlt7g%3D10.1016/j.jcrysgro.2017.04.005 KentPRCZungerATheory of electronic structure evolution in GaAsN and GaPN alloysPhys. Rev. B2001641152082001PhRvB..64k5208K10.1103/PhysRevB.64.115208 SamadjarDPDasTDDharSValence band anticrossing model for GaSb1−xBix and GaP1−xBix using k · p methodMater. Sci. Semicond. Process.20154053910.1016/j.mssp.2015.06.065 BushellZLOptical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometryJ. Appl. Phys.20181230457012018JAP...123d5701B10.1063/1.5006974 JoshyaRSPtakAJFranceRMascarenhasAKiniRNResonant state due to Bi in the dilute bismide alloy GaAs1−xBixPhys. Rev. B2014901652032014PhRvB..90p5203J10.1103/PhysRevB.90.165203 Fujiwara, H. Spectroscopic Ellipsometry: Principles and Applications (John Wiley & Sons, Chichester, 2007). LudewigPElectrical injection Ga(AsBi)/(AlGa)As single quantum well laserAppl. Phys. Lett.20131022421152013ApPhL.102x2115L10.1063/1.4811736 PolakMPScharochPKudraweicRFirst-principles calculations of bismuth induced changes in the band structure of dilute Ga-V-Bi and In-V-Bi alloys: chemical trends versus experimental dataSemicond. Sci. Technol.2015300940012015SeScT..30i4001P10.1088/0268-1242/30/9/094001 AlberiKBeatonDAMascarenhasADirect observation of the e_resonant state in GaAs1−xBixPhys. Rev. B2015922412012015PhRvB..92x1201A10.1103/PhysRevB.92.241201 FluegelBGiant spin-orbit bowing in GaAs1−xBixPhys. Rev. Lett.2006970672052006PhRvL..97f7205F1:STN:280:DC%2BD28rpsVantQ%3D%3D10.1103/PhysRevLett.97.067205 FluegelBZhangYGeiszJFMascarenhasAConfirmation of the impurity band model for GaP1−xNxPhys. Rev. B2005720732032005PhRvB..72g3203F10.1103/PhysRevB.72.073203 MarkoIPOptical gain in GaAsBi/GaAs quantum well diode lasersSci. Rep.201662016NatSR...628863M1:CAS:528:DC%2BC28XhtFaitL7E10.1038/srep28863 Richards, R. D. et al. GaAsBi: an alternative to InGaAs based multiple quantum well photovoltaics. In proceedings of the 43rd IEEE Photovoltaics Specialists Conference1135 (2016). GuYNearly lattice-matched short-wave infrared InGaAsBi photodetectors on InPAppl. Phys. Lett.20161080321022016ApPhL.108c2102G10.1063/1.4940201 Broderick, C. A., Xiong, W. & Rorison, J. M. Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers. In proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices47 (2016). SandallICDemonstration of InAsBi photoresponse beyond 3.5 mmAppl. Phys. Lett.20141041711092014ApPhL.104q1109S10.1063/1.4873403 FuyukiTYoshidaKYoshiokaRYoshimotoMElectrically pumped room-temperature operation of GaAs1−xBix laser diodes with low-temperature dependence of oscillation wavelengthAppl. Phys. Express201470821012014APExp...7h2101F10.7567/APEX.7.082101 BroderickCAUsmanMO’ReillyEPDerivation of 12 and 14-band k · p hamiltonians for dilute bismide and bismide-nitride alloysSemicond. Sci. Technol.2013281250252013SeScT..28l5025B10.1088/0268-1242/28/12/125025 JinSRSweeneySJInGaAsBi alloys on InP for efficient near-and mid-infrared light emitting devicesJ. Appl. Phys.20131142131032013JAP...114u3103J10.1063/1.4837615 WuJBand anticrossing in GaP1−xNx alloysPhys. Rev. B200265241303(R)2002PhRvB..65x1303W10.1103/PhysRevB.65.241303 JanottiAWeiS-HZhangSBTheoretical study of the effects of isovalent coalloying of Bi and N in GaAsPhys. Rev. B2002651152032002PhRvB..65k5203J10.1103/PhysRevB.65.115203 BroderickCAHarnedyPEO’ReillyEPTheory of the electronic and optical properties of dilute bismide quantum well lasersIEEE J. Sel. Top. Quant. Electron.201521150331310.1109/JSTQE.2015.2448652 ThomasTRequirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cellSemicond. Sci. Technol.2015300940102015SeScT..30i4010T10.1088/0268-1242/30/9/094010 DengH-XBand crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of bi and n incorporated gaasPhys. Rev. B2010821932042010PhRvB..82s3204D10.1103/PhysRevB.82.193204 SimmonsRAJinSRSweeneySJClowesSKEnhancement of the Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuthAppl. Phys. Lett.20151071424012015ApPhL.107n2401S10.1063/1.4932122 UsmanMBroderickCALindsayAO’ReillyEPTight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAsPhys. Rev. B2011842452022011PhRvB..84x5202U10.1103/PhysRevB.84.245202 Sweeney, S. J., Batool, Z., Hild, K., Jin, S. R. & Hosea, T. J. C. The potential role of bismide alloys in future photonic devices. In proceedings of the 13th International Conference on Transparent Optical Networks1 (2011). PursleyBLuengo-KovacMVardarGGoldmanRSSihVSpin lifetime measurements in gaasbi thin filmsAppl. Phys. Lett.20131020224202013ApPhL.102b2420P10.1063/1.4781415 ChristianTMBeatonDAAlberiKFluegelBMascarenhasAMysterious absence of pair luminescence in gallium phosphide bismideAppl. Phys. Express201580612022015APExp...8f1202C10.7567/APEX.8.061202 NattermannLMOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%J. Cryst. Growth20174631512017JCrGr.463..151N1:CAS:528:DC%2BC2sXjsVyjt7g%3D10.1016/j.jcrysgro.2017.02.021 LuoGUnderstanding and reducing deleterious defects in the metastable alloy GaAsBi. NPG AsiaMaterials20179345 Li, H. & Wang, S. M. (eds) Bismuth-Containing Compounds (Springer, New York, 2013). KondowMGaInNAs: a novel material for long-wavelength semiconductor lasersIEEE J. Sel. Topics Quantum Electron.199737191997IJSTQ...3..719K1:CAS:528:DyaK2sXntVKntr0%3D10.1109/2944.640627 YoshidaJKitaTWadaOOeKTemperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopyJpn. J. Appl. Phys.2003423712003JaJAP..42..371Y1:CAS:528:DC%2BD3sXhvFWis7Y%3D10.1143/JJAP.42.371 BroderickCADetermination of type-I band offsets in GaBixAs1−x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k · p calculationsSemicond. Sci. Technol.20153009400 TM Christian (43142_CR41) 2015; 8 T Fuyuki (43142_CR8) 2014; 7 ZL Bushell (43142_CR46) 2018; 123 CA Broderick (43142_CR61) 2015; 21 43142_CR2 RS Joshya (43142_CR62) 2014; 90 CA Broderick (43142_CR3) 2012; 27 43142_CR1 IC Sandall (43142_CR24) 2014; 104 Z Batool (43142_CR31) 2012; 111 TM Christian (43142_CR42) 2016; 55 CA Broderick (43142_CR32) 2013; 28 H-X Deng (43142_CR34) 2010; 82 K Alberi (43142_CR63) 2015; 92 L Nattermann (43142_CR71) 2017; 470 B Fluegel (43142_CR40) 2006; 97 RA Simmons (43142_CR21) 2015; 107 M Güngerich (43142_CR67) 2006; 74 T Thomas (43142_CR17) 2015; 30 Y Zhang (43142_CR64) 2000; 62 R Alaya (43142_CR58) 2016; 16 FA Trumbore (43142_CR44) 1966; 9 43142_CR18 J Yoshida (43142_CR28) 2003; 42 P Ludewig (43142_CR6) 2013; 102 43142_CR15 Y Gu (43142_CR25) 2016; 108 43142_CR57 DP Samadjar (43142_CR49) 2015; 40 H Kim (43142_CR11) 2017; 32 M Usman (43142_CR30) 2011; 84 IP Marko (43142_CR10) 2016; 6 S Francoeur (43142_CR27) 2003; 82 S Liebich (43142_CR68) 2011; 99 G Luo (43142_CR51) 2017; 9 SJ Sweeney (43142_CR5) 2013; 113 K Alberi (43142_CR29) 2007; 75 JJ Lee (43142_CR22) 1997; 70 EP O’Reilly (43142_CR38) 2009; 24 SR Jin (43142_CR14) 2013; 114 B Pursley (43142_CR20) 2013; 102 W Shan (43142_CR35) 1999; 82 W Shan (43142_CR53) 2000; 76 I Vurgaftman (43142_CR56) 2001; 89 P Dongmo (43142_CR26) 2012; 112 J Wu (43142_CR65) 2002; 65 A Janotti (43142_CR55) 2002; 65 CA Broderick (43142_CR52) 2015; 30 IP Marko (43142_CR13) 2017; 23 X Wu (43142_CR12) 2017; 4 L Nattermann (43142_CR43) 2017; 463 S Mazzucato (43142_CR19) 2013; 102 CJ Hunter (43142_CR23) 2012; 24 IP Marko (43142_CR4) 2012; 101 L Nattermann (43142_CR70) 2016; 5 Y Zhang (43142_CR33) 2005; 71 43142_CR45 M Kondow (43142_CR36) 1997; 3 P Carrier (43142_CR39) 2004; 70 CA Broderick (43142_CR16) 2018; 33 B Fluegel (43142_CR66) 2005; 72 K Forghani (43142_CR69) 2014; 105 MPCM Krijn (43142_CR60) 1991; 6 R Butkutė (43142_CR9) 2014; 50 MP Polak (43142_CR48) 2015; 30 SC Jain (43142_CR47) 1990; 68 CG Van de Walle (43142_CR59) 1989; 39 M Usman (43142_CR50) 2013; 87 IP Marko (43142_CR7) 2014; 47 PRC Kent (43142_CR37) 2001; 64 C Harris (43142_CR54) 2008; 20 |
| References_xml | – volume: 47 start-page: 345103 year: 2014 ident: 43142_CR7 publication-title: J. Phys. D: Appl. Phys. doi: 10.1088/0022-3727/47/34/345103 contributor: fullname: IP Marko – volume: 70 start-page: 035212 year: 2004 ident: 43142_CR39 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.70.035212 contributor: fullname: P Carrier – volume: 27 start-page: 094011 year: 2012 ident: 43142_CR3 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/27/9/094011 contributor: fullname: CA Broderick – volume: 42 start-page: 371 year: 2003 ident: 43142_CR28 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.42.371 contributor: fullname: J Yoshida – volume: 40 start-page: 539 year: 2015 ident: 43142_CR49 publication-title: Mater. Sci. Semicond. Process. doi: 10.1016/j.mssp.2015.06.065 contributor: fullname: DP Samadjar – volume: 4 start-page: 1322 year: 2017 ident: 43142_CR12 publication-title: ACS Photonics doi: 10.1021/acsphotonics.7b00240 contributor: fullname: X Wu – volume: 123 start-page: 045701 year: 2018 ident: 43142_CR46 publication-title: J. Appl. Phys. doi: 10.1063/1.5006974 contributor: fullname: ZL Bushell – volume: 5 start-page: 209 year: 2016 ident: 43142_CR70 publication-title: Applied Materials Today doi: 10.1016/j.apmt.2016.09.018 contributor: fullname: L Nattermann – volume: 9 start-page: 4 year: 1966 ident: 43142_CR44 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1754592 contributor: fullname: FA Trumbore – volume: 76 start-page: 3251 year: 2000 ident: 43142_CR53 publication-title: Appl. Phys. Lett. doi: 10.1063/1.126597 contributor: fullname: W Shan – volume: 39 start-page: 1871 year: 1989 ident: 43142_CR59 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.39.1871 contributor: fullname: CG Van de Walle – volume: 82 start-page: 3874 year: 2003 ident: 43142_CR27 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1581983 contributor: fullname: S Francoeur – volume: 75 start-page: 045203 year: 2007 ident: 43142_CR29 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.75.045203 contributor: fullname: K Alberi – volume: 114 start-page: 213103 year: 2013 ident: 43142_CR14 publication-title: J. Appl. Phys. doi: 10.1063/1.4837615 contributor: fullname: SR Jin – volume: 463 start-page: 151 year: 2017 ident: 43142_CR43 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2017.02.021 contributor: fullname: L Nattermann – volume: 30 start-page: 094001 year: 2015 ident: 43142_CR48 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/30/9/094001 contributor: fullname: MP Polak – volume: 24 start-page: 2191 year: 2012 ident: 43142_CR23 publication-title: IEEE Photon. Tech. Lett. doi: 10.1109/LPT.2012.2225420 contributor: fullname: CJ Hunter – volume: 28 start-page: 125025 year: 2013 ident: 43142_CR32 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/28/12/125025 contributor: fullname: CA Broderick – volume: 102 start-page: 252107 year: 2013 ident: 43142_CR19 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4812660 contributor: fullname: S Mazzucato – volume: 97 start-page: 067205 year: 2006 ident: 43142_CR40 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.97.067205 contributor: fullname: B Fluegel – volume: 104 start-page: 171109 year: 2014 ident: 43142_CR24 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4873403 contributor: fullname: IC Sandall – volume: 8 start-page: 061202 year: 2015 ident: 43142_CR41 publication-title: Appl. Phys. Express doi: 10.7567/APEX.8.061202 contributor: fullname: TM Christian – volume: 71 start-page: 155201 year: 2005 ident: 43142_CR33 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.71.155201 contributor: fullname: Y Zhang – ident: 43142_CR15 doi: 10.1109/NUSOD.2016.7547020 – volume: 470 start-page: 15 year: 2017 ident: 43142_CR71 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2017.04.005 contributor: fullname: L Nattermann – volume: 33 start-page: 094007 year: 2018 ident: 43142_CR16 publication-title: Semicond. Sci. Technol. doi: 10.1088/1361-6641/aad2bd contributor: fullname: CA Broderick – volume: 7 start-page: 082101 year: 2014 ident: 43142_CR8 publication-title: Appl. Phys. Express doi: 10.7567/APEX.7.082101 contributor: fullname: T Fuyuki – volume: 55 start-page: 108002 year: 2016 ident: 43142_CR42 publication-title: Jpn. J. Appl. Phys. doi: 10.7567/JJAP.55.108002 contributor: fullname: TM Christian – volume: 68 start-page: 3747 year: 1990 ident: 43142_CR47 publication-title: J. Appl. Phys. doi: 10.1063/1.346291 contributor: fullname: SC Jain – volume: 30 start-page: 094009 year: 2015 ident: 43142_CR52 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/30/9/094009 contributor: fullname: CA Broderick – volume: 84 start-page: 245202 year: 2011 ident: 43142_CR30 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.84.245202 contributor: fullname: M Usman – volume: 90 start-page: 165203 year: 2014 ident: 43142_CR62 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.90.165203 contributor: fullname: RS Joshya – volume: 3 start-page: 719 year: 1997 ident: 43142_CR36 publication-title: IEEE J. Sel. Topics Quantum Electron. doi: 10.1109/2944.640627 contributor: fullname: M Kondow – volume: 105 start-page: 111101 year: 2014 ident: 43142_CR69 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4895116 contributor: fullname: K Forghani – volume: 82 start-page: 193204 year: 2010 ident: 43142_CR34 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.82.193204 contributor: fullname: H-X Deng – volume: 70 start-page: 3266 year: 1997 ident: 43142_CR22 publication-title: Appl. Phys. Lett. doi: 10.1063/1.119158 contributor: fullname: JJ Lee – volume: 21 start-page: 1503313 year: 2015 ident: 43142_CR61 publication-title: IEEE J. Sel. Top. Quant. Electron. doi: 10.1109/JSTQE.2015.2448652 contributor: fullname: CA Broderick – volume: 16 start-page: 288 year: 2016 ident: 43142_CR58 publication-title: Curr. Appl. Phys. doi: 10.1016/j.cap.2015.11.019 contributor: fullname: R Alaya – volume: 102 start-page: 242115 year: 2013 ident: 43142_CR6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4811736 contributor: fullname: P Ludewig – volume: 72 start-page: 073203 year: 2005 ident: 43142_CR66 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.72.073203 contributor: fullname: B Fluegel – volume: 65 start-page: 241303(R) year: 2002 ident: 43142_CR65 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.65.241303 contributor: fullname: J Wu – volume: 6 start-page: 27 year: 1991 ident: 43142_CR60 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/6/1/005 contributor: fullname: MPCM Krijn – ident: 43142_CR1 doi: 10.1007/978-1-4614-8121-8 – volume: 111 start-page: 113108 year: 2012 ident: 43142_CR31 publication-title: J. Appl. Phys. doi: 10.1063/1.4728028 contributor: fullname: Z Batool – volume: 89 start-page: 5815 year: 2001 ident: 43142_CR56 publication-title: J. Appl. Phys. doi: 10.1063/1.1368156 contributor: fullname: I Vurgaftman – ident: 43142_CR2 doi: 10.1109/ICTON.2011.5970829 – ident: 43142_CR45 doi: 10.1002/9780470060193 – volume: 50 start-page: 1155 year: 2014 ident: 43142_CR9 publication-title: Electron. Lett. doi: 10.1049/el.2014.1741 contributor: fullname: R Butkutė – volume: 108 start-page: 032102 year: 2016 ident: 43142_CR25 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4940201 contributor: fullname: Y Gu – volume: 24 start-page: 033001 year: 2009 ident: 43142_CR38 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/24/3/033001 contributor: fullname: EP O’Reilly – volume: 65 start-page: 115203 year: 2002 ident: 43142_CR55 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.65.115203 contributor: fullname: A Janotti – volume: 20 start-page: 295211 year: 2008 ident: 43142_CR54 publication-title: J. Phys.: Condens. Matter contributor: fullname: C Harris – volume: 101 start-page: 221108 year: 2012 ident: 43142_CR4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4768532 contributor: fullname: IP Marko – volume: 102 start-page: 022420 year: 2013 ident: 43142_CR20 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4781415 contributor: fullname: B Pursley – volume: 64 start-page: 115208 year: 2001 ident: 43142_CR37 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.64.115208 contributor: fullname: PRC Kent – volume: 107 start-page: 142401 year: 2015 ident: 43142_CR21 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4932122 contributor: fullname: RA Simmons – volume: 6 year: 2016 ident: 43142_CR10 publication-title: Sci. Rep. doi: 10.1038/srep28863 contributor: fullname: IP Marko – volume: 30 start-page: 094010 year: 2015 ident: 43142_CR17 publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/30/9/094010 contributor: fullname: T Thomas – volume: 112 start-page: 093710 year: 2012 ident: 43142_CR26 publication-title: J. Appl. Phys. doi: 10.1063/1.4761996 contributor: fullname: P Dongmo – volume: 92 start-page: 241201 year: 2015 ident: 43142_CR63 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.92.241201 contributor: fullname: K Alberi – volume: 62 start-page: 4493 year: 2000 ident: 43142_CR64 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.62.4493 contributor: fullname: Y Zhang – volume: 32 start-page: 075007 year: 2017 ident: 43142_CR11 publication-title: Semicond. Sci. Technol. doi: 10.1088/1361-6641/aa729b contributor: fullname: H Kim – volume: 99 start-page: 071109 year: 2011 ident: 43142_CR68 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3624927 contributor: fullname: S Liebich – volume: 82 start-page: 1221 year: 1999 ident: 43142_CR35 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.82.1221 contributor: fullname: W Shan – volume: 113 start-page: 043110 year: 2013 ident: 43142_CR5 publication-title: J. Appl. Phys. doi: 10.1063/1.4789624 contributor: fullname: SJ Sweeney – volume: 87 start-page: 115104 year: 2013 ident: 43142_CR50 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.87.115104 contributor: fullname: M Usman – volume: 9 start-page: 345 year: 2017 ident: 43142_CR51 publication-title: Materials contributor: fullname: G Luo – ident: 43142_CR18 doi: 10.1109/PVSC.2016.7749791 – volume: 74 start-page: 241202 year: 2006 ident: 43142_CR67 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.74.241202 contributor: fullname: M Güngerich – volume: 23 start-page: 1501512 year: 2017 ident: 43142_CR13 publication-title: IEEE J. Sel. Topics Quantum Electron. doi: 10.1109/JSTQE.2017.2719403 contributor: fullname: IP Marko – ident: 43142_CR57 |
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| Score | 2.3781834 |
| Snippet | Using spectroscopic ellipsometry measurements on GaP
1−
x
Bi
x
/GaP epitaxial layers up to
x
= 3.7% we observe a giant bowing of the direct band gap (
E
g
Γ
)... Abstract Using spectroscopic ellipsometry measurements on GaP 1− x Bi x /GaP epitaxial layers up to x = 3.7% we observe a giant bowing of the direct band gap... Using spectroscopic ellipsometry measurements on GaP1−xBix/GaP epitaxial layers up to x = 3.7% we observe a giant bowing of the direct band gap (EgΓ) and... Using spectroscopic ellipsometry measurements on GaP 1− x Bi x /GaP epitaxial layers up to x = 3.7% we observe a giant bowing of the direct band gap (... |
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| SubjectTerms | 132/122 639/301/119/1000 639/301/119/995 Alloys Humanities and Social Sciences multidisciplinary Science Science (multidisciplinary) Splitting |
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| Title | Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys |
| URI | https://link.springer.com/article/10.1038/s41598-019-43142-5 https://www.proquest.com/docview/2218969114 https://search.proquest.com/docview/2229228744 https://pubmed.ncbi.nlm.nih.gov/PMC6497675 |
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