Self-Convergent Programming Scheme for Multilevel P-Channel Flash Memory

We propose a novel operation scheme for multilevel p-channel flash memory cell with a self-convergent programming process. By utilizing the simultaneous Fowler-Nordheim electron tunneling out of floating gate and channel hot electron injection into floating gate, the threshold voltage of memory cell...

Full description

Saved in:
Bibliographic Details
Published inJPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP Vol. 39; no. 1R; pp. 1 - 7
Main Authors Shen, Shih-Jye, Yang, Ching-Song, Wang, Yen-Sen, Hsu, Charles Ching-Hsiang
Format Journal Article
LanguageEnglish
Published 01.01.2000
Online AccessGet full text

Cover

Loading…