Self-Convergent Programming Scheme for Multilevel P-Channel Flash Memory
We propose a novel operation scheme for multilevel p-channel flash memory cell with a self-convergent programming process. By utilizing the simultaneous Fowler-Nordheim electron tunneling out of floating gate and channel hot electron injection into floating gate, the threshold voltage of memory cell...
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Published in | JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP Vol. 39; no. 1R; pp. 1 - 7 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.01.2000
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Online Access | Get full text |
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