Self-Convergent Programming Scheme for Multilevel P-Channel Flash Memory

We propose a novel operation scheme for multilevel p-channel flash memory cell with a self-convergent programming process. By utilizing the simultaneous Fowler-Nordheim electron tunneling out of floating gate and channel hot electron injection into floating gate, the threshold voltage of memory cell...

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Published inJPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP Vol. 39; no. 1R; pp. 1 - 7
Main Authors Shen, Shih-Jye, Yang, Ching-Song, Wang, Yen-Sen, Hsu, Charles Ching-Hsiang
Format Journal Article
LanguageEnglish
Published 01.01.2000
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Summary:We propose a novel operation scheme for multilevel p-channel flash memory cell with a self-convergent programming process. By utilizing the simultaneous Fowler-Nordheim electron tunneling out of floating gate and channel hot electron injection into floating gate, the threshold voltage of memory cell can be converged to a specific value. The gate pulse level can be varied to result in different converged threshold voltages such that multilevel can be achieved. Owing to the nature of self-convergence, the possibility of eliminating or reducing the verification operation in multilevel applications increases considerably by using the proposed scheme. In this study the reliability considerations of this programming technique for long-term operations are also addressed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.1