Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter

The “true-hardness” of (100) single-crystal silicon has been measured as a function of boron doping concentration by nanoindentation with a pointed diamond indenter (Berkovich triangular pyramid). The boron-ion implanted silicon wafers in which the boron concentration is varied up to 2.0×10 20 cm -3...

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Published inJapanese Journal of Applied Physics Vol. 40; no. 3A; p. L183
Main Authors Guolin Yu, Guolin Yu, Junji Watanabe, Junji Watanabe, Katsutoshi Izumi, Katsutoshi Izumi, Kenshiro Nakashima, Kenshiro Nakashima, Takashi Jimbo, Takashi Jimbo, Masayoshi Umeno, Masayoshi Umeno
Format Journal Article
LanguageEnglish
Published 01.03.2001
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Abstract The “true-hardness” of (100) single-crystal silicon has been measured as a function of boron doping concentration by nanoindentation with a pointed diamond indenter (Berkovich triangular pyramid). The boron-ion implanted silicon wafers in which the boron concentration is varied up to 2.0×10 20 cm -3 are studied. The results reveal an increase in the hardness at high boron concentrations, and a hardness ratio of 1.5:1 between the heavily and lightly boron-doped silicon has been obtained.
AbstractList The “true-hardness” of (100) single-crystal silicon has been measured as a function of boron doping concentration by nanoindentation with a pointed diamond indenter (Berkovich triangular pyramid). The boron-ion implanted silicon wafers in which the boron concentration is varied up to 2.0×10 20 cm -3 are studied. The results reveal an increase in the hardness at high boron concentrations, and a hardness ratio of 1.5:1 between the heavily and lightly boron-doped silicon has been obtained.
Author Takashi Jimbo, Takashi Jimbo
Junji Watanabe, Junji Watanabe
Katsutoshi Izumi, Katsutoshi Izumi
Guolin Yu, Guolin Yu
Kenshiro Nakashima, Kenshiro Nakashima
Masayoshi Umeno, Masayoshi Umeno
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CitedBy_id crossref_primary_10_1016_j_precisioneng_2004_06_006
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crossref_primary_10_1002_adfm_201001471
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