Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography
Grown-in microdefects of a slowly grown Czochralski (CZ) silicon crystal were studied by short wavelength synchrotron radiation topography and successfully visualized. It was shown that the microdefects had spherical strain fields, by comparing the defect images in the two topographs taken with the...
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Published in | Japanese Journal of Applied Physics Vol. 39; no. 11R; p. 6130 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.11.2000
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Online Access | Get full text |
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