(Invited) Electric-Field-Induced Ultralow Power Switching in Superlattice Phase Change Materials

The superlattice (SL) phase change materials, consisting of GeTe/Sb2Te3 (GeTeSL) or SnTe/Sb2Te3 (SnTeSL), were demonstrated to achieve extremely low power RESET operation. The eight-layered SnTeSL consisting of Sn10Te90 showed 10-3 lower RESET power than Ge2Sb2Te5 (GST225) with the same film thickne...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 64; no. 14; pp. 71 - 76
Main Authors Shintani, Toshimichi, Soeya, Susumu, Saiki, Toshiharu
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 08.08.2014
Online AccessGet full text

Cover

More Information
Summary:The superlattice (SL) phase change materials, consisting of GeTe/Sb2Te3 (GeTeSL) or SnTe/Sb2Te3 (SnTeSL), were demonstrated to achieve extremely low power RESET operation. The eight-layered SnTeSL consisting of Sn10Te90 showed 10-3 lower RESET power than Ge2Sb2Te5 (GST225) with the same film thickness. The electric and optical experimental results indicate that the mechanism of the low power switching is the RESET operation induced not by thermal energy but by the electric field, which can reduce the dynamic current. This hypothesis was supported by the first principle molecular dynamics. The single-layered SnTeSL showed 10-4 RESET power, which is explained by the electric-field-induced switching.
ISSN:1938-5862
1938-6737
DOI:10.1149/06414.0071ecst