Effects of Polysilane Addition to Chlorobenzene and High Temperature Annealing on CH3NH3PbI3 Perovskite Photovoltaic Devices

CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion eff...

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Published inCoatings (Basel) Vol. 11; no. 6; p. 665
Main Authors Oku, Takeo, Taguchi, Masaya, Suzuki, Atsushi, Kitagawa, Kaede, Asakawa, Yugo, Yoshida, Satoshi, Okita, Masanobu, Minami, Satoshi, Fukunishi, Sakiko, Tachikawa, Tomoharu
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.06.2021
Subjects
Annealing
Chlorobenzene
Devices
Efficiency
High temperature
Humidity
Molecular orbitals
Perovskites
Photovoltaic cells
Quantum efficiency
Raman spectra
United States > US
Japan
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Abstract CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices.
AbstractList CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices.
Author Taguchi, Masaya
Minami, Satoshi
Tachikawa, Tomoharu
Oku, Takeo
Suzuki, Atsushi
Asakawa, Yugo
Fukunishi, Sakiko
Yoshida, Satoshi
Okita, Masanobu
Kitagawa, Kaede
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  surname: Tachikawa
  fullname: Tachikawa, Tomoharu
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Snippet CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in...
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SubjectTerms Annealing
Chlorobenzene
Devices
Efficiency
High temperature
Humidity
Molecular orbitals
Perovskites
Photovoltaic cells
Quantum efficiency
Raman spectra
Title Effects of Polysilane Addition to Chlorobenzene and High Temperature Annealing on CH3NH3PbI3 Perovskite Photovoltaic Devices
URI https://www.proquest.com/docview/2544695690
Volume 11
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