Numerical Calculation of Excimer-Laser-Induced Lateral-Crystallization of Silicon Thin-Films

• Published in: Japanese Journal of Applied Physics Vol. 40; no. 2R; p. 492
• Main Authors: Yeh, Wen-Chang, Masakiyo Matsumura, Masakiyo Matsumura
• Format: Journal Article
• Language: English
• Published: 01.02.2001

Excimer-laser-induced lateral-crystallization of Si thin-films has been characterized numerically. The effects of the Si film thickness, light intensity profile and thermal properties of the underlayer on grain growth are discussed. The tilted melt-solid interface is essential for large grain growth...