Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules
An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses...
Saved in:
| Published in | IEEE transactions on electron devices Vol. 45; no. 2; pp. 423 - 429 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.02.1998
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses in the i-layer of the device. This model/equivalent circuit matches the I(V) curves of a-Si:H cells over an illumination range of six orders of magnitude. The model clearly separates effects related to the technology of the device (series and parallel resistance) and effects related to the physics of the p-i-n junction (recombination losses). It also allows an effective /spl mu//spl tau/ product in the i-layer of the device to be determined, characterizing its state of degradation. |
|---|---|
| AbstractList | An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses in the i-layer of the device. This model/equivalent circuit matches the I(V) curves of a-Si:H cells over an illumination range of six orders of magnitude. The model clearly separates effects related to the technology of the device (series and parallel resistance) and effects related to the physics of the p-i-n junction (recombination losses). It also allows an effective /spl mu//spl tau/ product in the i-layer of the device to be determined, characterizing its state of degradation. An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses in the i-layer of the device. This model/equivalent circuit matches the I(V) curves of a-Si:H cells over an illumination range of six orders of magnitude. The model clearly separates effects related to the technology of the device (series and parallel resistance) and effects related to the physics of the p-i-n junction (recombination losses). It also allows an effective mutau product in the i-layer of the device to be determined, characterizing its state of degradation |
| Author | Merten, J. Platz, R. Shah, A.V. Asensi, J.M. Andreu, J. Voz, C. |
| Author_xml | – sequence: 1 givenname: J. surname: Merten fullname: Merten, J. organization: Dept. de Fisica Aplicada i Electron., Barcelona Univ., Spain – sequence: 2 givenname: J.M. surname: Asensi fullname: Asensi, J.M. – sequence: 3 givenname: C. surname: Voz fullname: Voz, C. – sequence: 4 givenname: A.V. surname: Shah fullname: Shah, A.V. – sequence: 5 givenname: R. surname: Platz fullname: Platz, R. – sequence: 6 givenname: J. surname: Andreu fullname: Andreu, J. |
| BookMark | eNpFkM1LAzEQxYNUsFUPXj3lJHjYmtmPbHIU8aNQ8KJXQzY7i5Hspk12C_73prbo4TEM83sD7y3IbPADEnIFbAnA5B3wJa8Er_kJmUNV1ZnkJZ-ROWMgMlmI4owsYvxKKy_LfE4-Vv0m-B22FLeT3WmHw0iNDWayI9VDm6Td92iNdrT3LTra-UB178Pm00-RRuus8QON3ulADToXf22JnRzGC3LaaRfx8jjPyfvT49vDS7Z-fV493K8zU9RyzBpZN0yAASFyzWowpuYlE9g0QjZGcmx1ibxCUXQgRd4K1gjgACAbZqDD4pyww18TJ6MCGgxGj8pr-7_slbM6VxUrS5YsNwdLyr-dMI6qt3EfQA-YkqlcFKm7vE7g7fF38DEG7NQm2F6HbwVM7UtXwNWh9MReH1iLiH_c8fgDnEJ_OA |
| CODEN | IETDAI |
| CitedBy_id | crossref_primary_10_1016_j_solener_2014_12_004 crossref_primary_10_1016_S0921_5107_99_00299_8 crossref_primary_10_1002_pip_2410 crossref_primary_10_1134_S106378261709007X crossref_primary_10_1016_j_renene_2010_07_001 crossref_primary_10_1002_pip_2414 crossref_primary_10_1016_j_solener_2017_08_023 crossref_primary_10_1109_JPHOTOV_2015_2478057 crossref_primary_10_1557_PROC_0989_A19_03 crossref_primary_10_1016_j_ijleo_2020_165653 crossref_primary_10_1016_j_solener_2020_06_033 crossref_primary_10_1063_1_2357641 crossref_primary_10_1080_14786430902785344 crossref_primary_10_1016_j_spmi_2020_106640 crossref_primary_10_1080_02286203_2010_11442591 crossref_primary_10_1139_cjp_2013_0610 crossref_primary_10_3390_en9060427 crossref_primary_10_1016_j_apenergy_2015_06_037 crossref_primary_10_1080_01430750_1998_9675700 crossref_primary_10_1016_S0022_3093_99_00913_8 crossref_primary_10_1016_S0022_3093_99_00917_5 crossref_primary_10_1002_aenm_201601930 crossref_primary_10_1016_j_solmat_2010_04_070 crossref_primary_10_1002_pip_1218 crossref_primary_10_1021_acsenergylett_0c00156 crossref_primary_10_1016_j_solmat_2014_07_048 crossref_primary_10_1016_j_solmat_2016_09_039 crossref_primary_10_1109_JPHOTOV_2013_2282747 crossref_primary_10_3390_en12030358 crossref_primary_10_1007_s12596_019_00550_0 crossref_primary_10_1002_adfm_201202523 crossref_primary_10_1088_0957_0233_22_8_085702 crossref_primary_10_1557_PROC_557_501 crossref_primary_10_4028_www_scientific_net_SSP_205_206_480 crossref_primary_10_1063_1_1646435 crossref_primary_10_1063_1_1861968 crossref_primary_10_1088_0022_3727_42_5_055102 crossref_primary_10_1016_j_solener_2006_12_001 crossref_primary_10_1002_aesr_202400032 crossref_primary_10_1002_pssa_201127264 crossref_primary_10_1109_JPHOTOV_2022_3145096 crossref_primary_10_1002_pip_533 crossref_primary_10_1063_1_4936592 crossref_primary_10_1016_j_orgel_2013_02_039 crossref_primary_10_1109_JPHOTOV_2016_2590940 crossref_primary_10_1002_pssa_201431708 crossref_primary_10_1016_j_sse_2007_05_012 crossref_primary_10_1109_TPEL_2003_810841 crossref_primary_10_1557_PROC_1153_A07_09 crossref_primary_10_1016_j_protcy_2015_10_005 crossref_primary_10_1002_pip_2325 crossref_primary_10_1557_PROC_664_A25_9_1 crossref_primary_10_1002_pip_2564 crossref_primary_10_1016_j_engappai_2005_02_004 crossref_primary_10_1016_j_tsf_2015_11_011 crossref_primary_10_1063_1_2938839 crossref_primary_10_1080_01430750_2004_9674942 crossref_primary_10_1016_S0040_6090_01_01658_3 crossref_primary_10_3103_S0003701X20010090 crossref_primary_10_3390_ma16134841 crossref_primary_10_1002_ese3_292 crossref_primary_10_1016_j_matcom_2023_02_009 crossref_primary_10_1109_JPHOTOV_2017_2685438 crossref_primary_10_1016_j_jnoncrysol_2007_09_084 crossref_primary_10_1016_j_solmat_2009_03_018 crossref_primary_10_1109_JPHOTOV_2015_2419136 crossref_primary_10_3390_en11061463 crossref_primary_10_1002_pssr_201510308 crossref_primary_10_1063_1_4798319 crossref_primary_10_1155_2020_8817440 crossref_primary_10_3390_app8030339 crossref_primary_10_1063_1_4789441 crossref_primary_10_1007_s10854_014_2604_9 crossref_primary_10_3103_S0003701X15010132 crossref_primary_10_1016_S0022_3093_01_01082_1 crossref_primary_10_1088_1468_6996_14_4_045009 crossref_primary_10_1002_pssa_200982723 crossref_primary_10_1002_pssa_201532961 crossref_primary_10_1088_0957_4484_26_46_465401 crossref_primary_10_1016_j_solener_2013_03_006 crossref_primary_10_1016_j_tsf_2005_07_146 crossref_primary_10_1007_s13391_013_3106_2 crossref_primary_10_1016_j_mssp_2022_106972 crossref_primary_10_1016_j_solmat_2013_12_024 crossref_primary_10_1016_j_jnoncrysol_2004_03_070 crossref_primary_10_1016_j_tsf_2007_12_032 crossref_primary_10_1016_j_enconman_2020_113283 crossref_primary_10_1016_j_rser_2016_11_190 crossref_primary_10_1007_s11708_009_0015_z crossref_primary_10_1063_1_3037235 crossref_primary_10_4028_www_scientific_net_AMR_1103_129 crossref_primary_10_1016_j_solmat_2006_06_002 crossref_primary_10_1016_j_solmat_2012_04_014 crossref_primary_10_1016_j_enconman_2005_07_007 crossref_primary_10_1016_j_jnoncrysol_2011_11_013 crossref_primary_10_1016_j_seta_2021_101711 crossref_primary_10_1115_1_4003584 crossref_primary_10_1016_j_apenergy_2011_09_036 crossref_primary_10_1109_JPHOTOV_2011_2178232 crossref_primary_10_1109_JPHOTOV_2014_2362306 crossref_primary_10_1088_1742_6596_682_1_012017 crossref_primary_10_1088_1757_899X_631_4_042016 crossref_primary_10_1063_1_3553886 crossref_primary_10_1063_1_5026511 crossref_primary_10_1080_14786430902738772 crossref_primary_10_1007_s00202_018_0722_8 crossref_primary_10_1002_pip_2872 crossref_primary_10_1021_acsenergylett_9b02080 crossref_primary_10_1080_14786451_2011_592587 crossref_primary_10_1016_j_ijepes_2013_09_031 crossref_primary_10_1016_j_optlaseng_2013_04_015 crossref_primary_10_1016_j_solener_2014_09_043 crossref_primary_10_1002_pssa_201532918 crossref_primary_10_1016_j_solmat_2013_05_046 crossref_primary_10_1016_j_solener_2017_02_019 crossref_primary_10_1109_TIE_2014_2317138 crossref_primary_10_1016_j_solener_2012_11_019 crossref_primary_10_1016_j_solmat_2015_05_008 crossref_primary_10_1049_rpg2_12110 crossref_primary_10_1063_1_1379560 crossref_primary_10_1145_3126568 crossref_primary_10_1016_j_renene_2015_02_017 crossref_primary_10_1109_JPHOTOV_2018_2868010 crossref_primary_10_1021_nl501774u crossref_primary_10_1080_02286203_2016_1261219 crossref_primary_10_1039_C4RA02327G crossref_primary_10_1016_j_tsf_2013_09_078 crossref_primary_10_1149_1945_7111_acb851 crossref_primary_10_1002_pssa_202100451 crossref_primary_10_1002_ente_202200485 crossref_primary_10_1021_acs_nanolett_9b02839 crossref_primary_10_1007_s11082_012_9613_9 crossref_primary_10_1016_j_solener_2018_12_002 crossref_primary_10_1109_JPHOTOV_2022_3169525 crossref_primary_10_1016_j_solmat_2013_06_011 crossref_primary_10_1109_JPHOTOV_2013_2270349 crossref_primary_10_1016_S0927_0248_98_00169_X |
| Cites_doi | 10.1080/01418639508240314 10.1080/09500839208229273 10.1063/1.89674 10.1557/PROC-420-51 10.1063/1.362614 10.1007/978-3-322-94731-4 10.1143/JJAP.21.L464 |
| ContentType | Journal Article |
| Contributor | Universitat de Barcelona |
| Contributor_xml | – sequence: 1 fullname: Universitat de Barcelona |
| Copyright | (c) IEEE, 1998 info:eu-repo/semantics/openAccess |
| Copyright_xml | – notice: (c) IEEE, 1998 info:eu-repo/semantics/openAccess |
| DBID | RIA RIE AAYXX CITATION 7SP 8FD L7M XX2 |
| DOI | 10.1109/16.658676 |
| DatabaseName | IEEE All-Society Periodicals Package (ASPP) IEEE Xplore CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace Recercat |
| DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Technology Research Database |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Xplore url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1557-9646 |
| EndPage | 429 |
| ExternalDocumentID | oai_recercat_cat_2072_50440 10_1109_16_658676 658676 |
| GroupedDBID | -~X .DC 0R~ 29I 3EH 4.4 5GY 5VS 6IK 97E AAJGR AASAJ ABQJQ ABVLG ACGFO ACGFS ACIWK ACKIV ACNCT AENEX AETIX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV B-7 BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RIG RNS TAE TN5 VH1 VJK VOH XFK AAYXX CITATION 7SP 8FD L7M XX2 |
| ID | FETCH-LOGICAL-c379t-b97b081c1882a071cc76408ebb89bc96eda4e65e83f1982d80b8161119b0c1fe3 |
| IEDL.DBID | RIE |
| ISSN | 0018-9383 |
| IngestDate | Fri Oct 25 12:11:28 EDT 2024 Sat Aug 17 02:45:46 EDT 2024 Fri Aug 23 01:23:26 EDT 2024 Wed Jun 26 19:31:25 EDT 2024 |
| IsDoiOpenAccess | true |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 2 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c379t-b97b081c1882a071cc76408ebb89bc96eda4e65e83f1982d80b8161119b0c1fe3 |
| Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| OpenAccessLink | https://recercat.cat/handle/2072/50440 |
| PQID | 28396427 |
| PQPubID | 23500 |
| PageCount | 7 |
| ParticipantIDs | crossref_primary_10_1109_16_658676 csuc_recercat_oai_recercat_cat_2072_50440 proquest_miscellaneous_28396427 ieee_primary_658676 |
| PublicationCentury | 1900 |
| PublicationDate | 1998-02-01 |
| PublicationDateYYYYMMDD | 1998-02-01 |
| PublicationDate_xml | – month: 02 year: 1998 text: 1998-02-01 day: 01 |
| PublicationDecade | 1990 |
| PublicationTitle | IEEE transactions on electron devices |
| PublicationTitleAbbrev | TED |
| PublicationYear | 1998 |
| Publisher | IEEE |
| Publisher_xml | – name: IEEE |
| References | ref12 asensi (ref8) 1992 ref10 ref2 jiang (ref11) 0 green (ref1) 1992 platz (ref5) 1996; 420 merten (ref9) 1996 ref7 ref4 eickhoff (ref13) 1995 ref6 kusian (ref3) 1989 |
| References_xml | – ident: ref4 doi: 10.1080/01418639508240314 – ident: ref6 doi: 10.1080/09500839208229273 – start-page: 769 year: 1992 ident: ref8 article-title: interface effects in amorphous silicon solar cells publication-title: Proc 11th E C Photovoltaic Solar Energy Conf contributor: fullname: asensi – ident: ref12 doi: 10.1063/1.89674 – year: 1992 ident: ref1 publication-title: Solar Cells— Operating Principles Technology and System Application contributor: fullname: green – volume: 420 start-page: 51 year: 1996 ident: ref5 article-title: h$_2$-dilution versus buffer layers for increased $v_{\rm oc},$ publication-title: Proc Mater Res Soc Symp doi: 10.1557/PROC-420-51 contributor: fullname: platz – ident: ref7 doi: 10.1063/1.362614 – start-page: 238 year: 1995 ident: ref13 article-title: temperature dependence of $a$-si:h solar cell prameters-experiment and numerical simulations publication-title: Proc 13th Int Photovoltaic Science and Engineering Conf contributor: fullname: eickhoff – year: 1996 ident: ref9 publication-title: Photovoltaics with Amorphous Silicon Technological Physical and Technical Aspects contributor: fullname: merten – ident: ref2 doi: 10.1007/978-3-322-94731-4 – start-page: 52 year: 1989 ident: ref3 article-title: buffer layer and light degradation of $a$-si pin solar cells publication-title: Proc 9th E C Photovoltaic Solar Energy Conf contributor: fullname: kusian – ident: ref10 doi: 10.1143/JJAP.21.L464 – year: 0 ident: ref11 publication-title: Electro absorption measurements and built-in potentials in amorphous silicon pin solar cells contributor: fullname: jiang |
| SSID | ssj0016442 |
| Score | 2.0591862 |
| Snippet | An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a... |
| SourceID | csuc proquest crossref ieee |
| SourceType | Open Access Repository Aggregation Database Publisher |
| StartPage | 423 |
| SubjectTerms | Amorphous materials Amorphous semiconductors Amorphous silicon Amorphous silicon solar cells and modules Analytical models Current-voltage characteristics Cèl.lules solars Electron-hole recombination Elemental semiconductors Equivalent circuits Hidrogen Hydrogen Lighting Losses P-i-n diodes Photoconductivity Photovoltaic cells Physics Semiconductor device models Semiconductors Semiconductors amorfs Silicon Silicones Solar cells |
| Title | Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules |
| URI | https://ieeexplore.ieee.org/document/658676 https://search.proquest.com/docview/28396427 https://recercat.cat/handle/2072/50440 |
| Volume | 45 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Lb9QwELboSkhwaGEBdVseFuLCIdvYyfpxrBBVhQQnKvWEZU8m0oolC5vkAL-esZ1d8TpwiJRIsRXNjDPfjMffMPbKgrSoU14DdFHXrSwCyFWBsg2-qSLdScxDvv-grm_qd7er24lnO52FQcRUfIbLeJv28pstjDFVdkHeUml1xI60tfmo1mHDgNx6JgYXtH4p6ppIhERpL4Ra5oG_uZ4Z9CNMLVX--g8n53J1kk9t94mTMNaUfF6OQ1jCjz8YG__zux-w4wlk8stsFQ_ZHezm7P4v1INzdjeVfkL_iH3KeQVsOH4b12R4NBeH9Q7G9cB919DlN99TypunvjmccC73X7akoe3Y8369IWvqeB-DZB43Avo0jN4dN9g_ZjdXbz--uS6mrgsFVNoORbA6EE4AQdjbEwAB0KouDYZgbACrsPE1qhWaqhXWyMaUwRBsFMKGEkSL1RM267YdnjLemkZR2ItGVlijsF61JYpIp9No20qzYC_3CnFfM7mGS0FJaZ1QLottwV5HVTlyALgDP7hIiH14iJcstXSr2Dt7weZR-ofJ9jO82KvX0eKJgvAdkoQcYStLAZg---e4c3Yvn0CMxStP2WzYjfiMIMgQnifj-wl-RNrO |
| link.rule.ids | 230,315,783,787,799,888,27938,27939,55088 |
| linkProvider | IEEE |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Lb9QwELZgEaIceCxFLK9aiAuHbGMn8eOIENUCbU-t1BOW7UykVbdZukkO9Nd3bGdXvA4cIiVSbEUz48w34_E3hLzXnmuQMa_hZVaWDc-c51UGvHG2LgLdSchDnpyKxXn59aK6GHm241kYAIjFZzAPt3Evv177IaTKDtFbCinukntVgBXpsNZuywAde6IGZ7iCMe4aaYRYrg-ZmKehvzmfie8GPzZV-etPHN3L0eN0bruLrIShquRyPvRu7m_-4Gz8zy9_Qh6NMJN-THbxlNyBdkoe_kI-OCX3Y_Gn756R7ymzADWF62GJpodzUb_c-GHZU9vWeNnVz5j0prFzDkWkS-3VGnW0HjraLVdoTy3tQphMw1ZAF4fhu8MKun1yfvT57NMiG_suZL6Qus-clg6RgmeIvi1CEO-lKHMFzintvBZQ2xJEBapomFa8VrlTCBwZ0y73rIHiOZm06xZeENqoWmDgC4oXUALTVjQ5sECoU0vdcDUj77YKMT8SvYaJYUmuDRMmiW1GPgRVGXQBsPG2N4ESe_cQLp5LbqrQPXtGpkH6u8m2Mxxs1Wtw-QRB2BZQQgbRlcYQTL7857gD8mBxdnJsjr-cfntF9tJ5xFDK8ppM-s0AbxCQ9O5tNMRbFyzeGw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Improved+equivalent+circuit+and+analytical+model+for+amorphous+silicon+solar+cells+and+modules&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=Merten%2C+Jens&rft.au=Asensi+L%C3%B3pez%2C+Jos%C3%A9+Miguel&rft.au=Voz+S%C3%A1nchez%2C+Crist%C3%B3bal&rft.au=Shah%2C+A.+V&rft.date=1998-02-01&rft.pub=IEEE&rft.issn=0018-9383&rft_id=info:doi/10.1109%2F16.658676&rft.externalDocID=oai_recercat_cat_2072_50440 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon |