Operando observation of resistive switching in a resistive random-access memory by laser-excited photoemission electron microscope

Abstract We developed a laser-excited photoemission electron microscope (Laser-PEEM) that enables us to perform a non-destructive operando observation for elucidating the changes in the physical properties of electronic devices. By utilizing the Laser-PEEM, the non-volatile resistance change in the...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 59; no. SG; p. SGGB02
Main Authors Okuda, Yuji, Kawakita, Junpei, Taniuchi, Toshiyuki, Shima, Hisashi, Shimizu, Atsushi, Naitoh, Yasuhisa, Kinoshita, Kentaro, Akinaga, Hiro, Shin, Shik
Format Journal Article
LanguageEnglish
Published Tokyo Japanese Journal of Applied Physics 01.04.2020
Subjects
Electrical properties
Electron microscopes
Electronic devices
Lasers
Photoelectric emission
Physical properties
Random access memory
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Summary:Abstract We developed a laser-excited photoemission electron microscope (Laser-PEEM) that enables us to perform a non-destructive operando observation for elucidating the changes in the physical properties of electronic devices. By utilizing the Laser-PEEM, the non-volatile resistance change in the resistive random-access memory (ReRAM) was clearly visualized, even though the resistance change occurred under the electrode of the ReRAM, thanks to the deep probing depth. The operando observation of the Laser-PEEM is very promising as an observation method for various kinds of devices because the observation simultaneously provides us with morphological and electrical properties in real time.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab645f