Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells
III-nitride InGaN material is an ideal candidate for the fabrication of high performance photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past decade, significant efforts have been made to improve the PV performance of InGaN-based solar cells. In this paper, we p...
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| Published in | Materials today energy Vol. 31; no. C; p. 101229 |
|---|---|
| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United Kingdom
Elsevier Ltd
01.01.2023
Elsevier |
| Subjects | |
| Online Access | Get full text |
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| Abstract | III-nitride InGaN material is an ideal candidate for the fabrication of high performance photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past decade, significant efforts have been made to improve the PV performance of InGaN-based solar cells. In this paper, we perform a comprehensive review of the recent developments in InGaN-based solar cells. The topics of discussion include theoretical modeling, material epitaxy, device engineering, and high-temperature measurement. Particularly, we highlight subjects such as substrate technology, and properties that are unique to InGaN materials such as polarization control and their positive thermal coefficient. To date, outstanding high-temperature InGaN-based solar cells with quantum efficiency approaching 80% at 450 °C have been demonstrated. Future innovations in epitaxy science, device engineering, and integration methods are required to further advance the efficiency and expand the applications of InGaN-based solar cells.
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•A detailed summary of theoretical modeling of InGaN solar cells.•State-of the-art techniques for InGaN epitaxial growth.•Effective device engineering methods to improve the performance of InGaN solar cells.•High temperature performance of InGaN solar cells including temperature coefficient and carrier dynamics. |
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| AbstractList | III-nitride InGaN material is an ideal candidate for the fabrication of high performance photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past decade, significant efforts have been made to improve the PV performance of InGaN-based solar cells. In this paper, we perform a comprehensive review of the recent developments in InGaN-based solar cells. The topics of discussion include theoretical modeling, material epitaxy, device engineering, and high-temperature measurement. Particularly, we highlight subjects such as substrate technology, and properties that are unique to InGaN materials such as polarization control and their positive thermal coefficient. To date, outstanding high-temperature InGaN-based solar cells with quantum efficiency approaching 80% at 450 °C have been demonstrated. Future innovations in epitaxy science, device engineering, and integration methods are required to further advance the efficiency and expand the applications of InGaN-based solar cells.
[Display omitted]
•A detailed summary of theoretical modeling of InGaN solar cells.•State-of the-art techniques for InGaN epitaxial growth.•Effective device engineering methods to improve the performance of InGaN solar cells.•High temperature performance of InGaN solar cells including temperature coefficient and carrier dynamics. |
| ArticleNumber | 101229 |
| Author | Lin, Jingyu Wang, Dawei Li, Tao Wang, Xinqiang Xu, Mingfei Fu, Kai Fu, Houqiang Jiang, Hongxing Zhao, Yuji Lebeau, Justin Huang, Xuanqi |
| Author_xml | – sequence: 1 givenname: Yuji orcidid: 0000-0001-9199-4159 surname: Zhao fullname: Zhao, Yuji email: yuji.zhao@rice.edu organization: Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA – sequence: 2 givenname: Mingfei orcidid: 0000-0002-1717-1290 surname: Xu fullname: Xu, Mingfei organization: Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA – sequence: 3 givenname: Xuanqi surname: Huang fullname: Huang, Xuanqi organization: School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA – sequence: 4 givenname: Justin surname: Lebeau fullname: Lebeau, Justin organization: Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA – sequence: 5 givenname: Tao surname: Li fullname: Li, Tao organization: Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA – sequence: 6 givenname: Dawei surname: Wang fullname: Wang, Dawei organization: School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA – sequence: 7 givenname: Houqiang surname: Fu fullname: Fu, Houqiang organization: School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA – sequence: 8 givenname: Kai surname: Fu fullname: Fu, Kai organization: Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA – sequence: 9 givenname: Xinqiang surname: Wang fullname: Wang, Xinqiang organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China – sequence: 10 givenname: Jingyu surname: Lin fullname: Lin, Jingyu organization: Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409, USA – sequence: 11 givenname: Hongxing surname: Jiang fullname: Jiang, Hongxing organization: Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409, USA |
| BackLink | https://www.osti.gov/biblio/1962241$$D View this record in Osti.gov |
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| CitedBy_id | crossref_primary_10_1021_acs_iecr_4c01924 crossref_primary_10_1063_5_0241120 crossref_primary_10_1007_s13369_023_08645_4 crossref_primary_10_1038_s41598_023_34637_3 crossref_primary_10_1007_s40820_024_01412_6 crossref_primary_10_1109_TED_2023_3272297 crossref_primary_10_1088_2631_8695_ad5c2d crossref_primary_10_1007_s11082_024_07459_4 crossref_primary_10_1109_JPHOTOV_2024_3495024 crossref_primary_10_1021_acsami_4c13648 crossref_primary_10_1038_s41598_025_87919_3 crossref_primary_10_1109_LED_2023_3279813 crossref_primary_10_1021_acsaelm_3c01173 crossref_primary_10_1063_5_0232885 crossref_primary_10_1021_acsaelm_4c00404 crossref_primary_10_1049_ntw2_12115 crossref_primary_10_1016_j_joule_2024_08_006 |
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| Keywords | Epitaxy growth High temperature performance Device engineering InGaN-based solar cells |
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Device Lett. doi: 10.1109/LED.2019.2941830 |
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| Title | Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells |
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