Stoichiometry and Morphology Analysis of Thermally Deposited V2O5−x Thin Films for Si/V2O5−x Heterojunction Solar Cell Applications
In recent decades, dopant-free Si-based solar cells with a transition metal oxide layer have gained noticeable research interest as promising candidates for next-generation solar cells with both low manufacturing cost and high power conversion efficiency. Here, we report the effect of the substrate...
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Published in | Materials Vol. 15; no. 15; p. 5243 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Basel
MDPI AG
29.07.2022
MDPI |
Subjects | |
Online Access | Get full text |
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Summary: | In recent decades, dopant-free Si-based solar cells with a transition metal oxide layer have gained noticeable research interest as promising candidates for next-generation solar cells with both low manufacturing cost and high power conversion efficiency. Here, we report the effect of the substrate temperature for the deposition of vanadium oxide (V2O5−x, 0 ≤ X ≤ 5) thin films (TFs) for enhanced Si surface passivation. The effectiveness of SiOx formation at the Si/V2O5−x interface for Si surface passivation was investigated by comparing the results of minority carrier lifetime measurements, X-ray photoelectron spectroscopy, and atomic force microscopy. We successfully demonstrated that the deposition temperature of V2O5−x has a decisive effect on the surface passivation performance. The results confirmed that the aspect ratio of the V2O5−x islands that are initially deposited is a crucial factor to facilitate the transport of oxygen atoms originating from the V2O5−x being deposited to the Si surface. In addition, the stoichiometry of V2O5−x TFs can be notably altered by substrate temperature during deposition. As a result, experimentation with the fabricated Si/V2O5−x heterojunction solar cells confirmed that the power conversion efficiency is the highest at a V2O5−x deposition temperature of 75 °C. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1996-1944 1996-1944 |
DOI: | 10.3390/ma15155243 |