Probing defects in ZnO by persistent phosphorescence
Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.26...
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Published in | Opto-Electronic Advances Vol. 1; no. 6; pp. 18001101 - 18001106 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English Chinese |
Published |
Chengdu
Editorial Office of Opto-Electronic Advances
01.01.2018
Institue of Optics and Electronics, Chinese Academy of Sciences |
Subjects | |
Online Access | Get full text |
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