Probing defects in ZnO by persistent phosphorescence

• Published in: Opto-Electronic Advances Vol. 1; no. 6; pp. 18001101 - 18001106
• Main Authors: Ye, Honggang, Su, Zhicheng, Tang, Fei, Bao, Yitian, Lao, Xiangzhou, Chen, Guangde, Wang, Jian, Xu, Shijie
• Format: Journal Article
• Language: English; Chinese
• Published: Chengdu Editorial Office of Opto-Electronic Advances 01.01.2018; Institue of Optics and Electronics, Chinese Academy of Sciences
• Subjects: Crystal defects; defects; Electron traps; Excitation; Hydrogen; Interstitials; Lasers; Light; Luminescence; Phosphorescence; photoluminescence; Point defects; Semiconductors; Single crystals; Zinc oxide; Zinc oxides; China

Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.26...