Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

• Published in: Journal of crystal growth Vol. 136; no. 1; pp. 166 - 172
• Main Authors: Munns, G.O., Chen, W.L., Sherwin, M.E., Knightly, D., Haddad, G.I., Davis, L., Bhattacharya, P.K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.1994; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Aluminium arsenides; Inorganic compounds; Semiconductor materials; Semiconductor devices; Ternary compounds; Epitaxy; Photoluminescence; Purity; Binary compounds; Hall effect; Experimental study; Indium arsenides; Thin films; Indium phosphides; Chemical beam condensation; Carrier mobility; IV characteristic; Carrier density
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)90403-0

It has generally been recognized that sources of the highest purity facilitate growth of InP and InAlAs with excellent optical and electrical characteristics. The mobility, photoluminescence linewidths, X-ray linewidths, impurity levels, and ultimately device results have been evaluated for two different hydride purity levels. It was found that each of the above characteristics was affected by improved arsine and phosphine purity. The 77 K mobility of InP increased by a factor of 2 and the InAlAs silicon doping efficiency increased by a factor of 5. Accompanying improvement in device performance, notably the peak to valley ratio of resonant tunneling structures has been observed.