Thermoelectric properties of phase separated Ti substituted Zr0.75Hf0.25NiSn0.985Sb0.015 half-Heuslers

• Published in: Progress in natural science Vol. 30; no. 1; pp. 74 - 79
• Main Authors: Akram, Rizwan, Yan, Yonggao, Hussain, Mozaffar, She, Xiaoyu, Tang, Xinfeng
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.02.2020; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan,430070,China; Department of Physics,Air University,PAF Complex E-9,Islamabad,44000,Pakistan%State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan,430070,China%Department of Physics,Air University,PAF Complex E-9,Islamabad,44000,Pakistan
• Subjects: Doping; Half-Heuslers; Mobility; Sintering; Thermoelectric; Half-Heuslers; Mobility; Thermoelectric; Sintering; Doping

Sb is a very effective dopant for ZrNiSn based half-Heusler alloys. The effect of Ti substitution on Zr0.75Hf0.25NiSn0.985Sb0.015 half-Heusler (HH) semiconductor alloys has been investigated to explore the structural modifications and composition variation. TixHf0.25 Zr0.75-xNiSn0.985Sb0.015 (x = 0,...