Preparation of YbAlN piezoelectric thin film by sputtering and influence of Yb concentration on properties and crystal structure

• Published in: Ceramics international Vol. 47; no. 11; pp. 16029 - 16036
• Main Authors: Uehara, Masato, Amano, Yuki, Anggraini, Sri Ayu, Hirata, Kenji, Yamada, Hiroshi, Akiyama, Morito
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2021
• Subjects: Aluminum nitride; And ytterbium; Crystal structure; Design of experimental; Piezoelectricity; Sputtering; Piezoelectricity; And ytterbium; Design of experimental; Sputtering; Aluminum nitride; Crystal structure

Aluminum nitride (AlN) is a key material for piezoelectric micro-electromechanical systems (MEMS). Since the discovery of the increase in AlN piezo performance by scandium (Sc) doping, many groups have investigated other effective dopants. However, another effective single dopant has not yet been ex...