Solution-processed semiconducting aluminum-zinc-tin-oxide thin films and their thin-film transistor applications

• Published in: Ceramics international Vol. 40; no. 6; pp. 7829 - 7836
• Main Authors: Kim, Kyeong-Ah, Bak, Jun-Yong, Choi, Jeong-Seon, Yoon, Sung-Min
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.07.2014
• Subjects: Al-Zn-Sn-O; Aluminum; Annealing; Channels; Crystallites; Oxide semiconductor; Semiconductor devices; Solution process; Thin film transistors; Thin films; Thin-film transistor; Transistors; Oxide semiconductor; Al-Zn-Sn-O; Thin-film transistor; Solution process

We prepared aluminum-zinc-tin-oxide (AZTO) thin films by the solution spin-coating method and investigated their physical and electrical properties according to different incorporated amounts of Al. AZTO films annealed at 400°C were amorphous. Though SnO2 crystallites were detected in films annealed...