Solution-processed semiconducting aluminum-zinc-tin-oxide thin films and their thin-film transistor applications

• Published in: Ceramics international Vol. 40; no. 6; pp. 7829 - 7836
• Main Authors: Kim, Kyeong-Ah, Bak, Jun-Yong, Choi, Jeong-Seon, Yoon, Sung-Min
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.07.2014
• Subjects: Al-Zn-Sn-O; Aluminum; Annealing; Channels; Crystallites; Oxide semiconductor; Semiconductor devices; Solution process; Thin film transistors; Thin films; Thin-film transistor; Transistors; Oxide semiconductor; Al-Zn-Sn-O; Thin-film transistor; Solution process
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2013.12.127

We prepared aluminum-zinc-tin-oxide (AZTO) thin films by the solution spin-coating method and investigated their physical and electrical properties according to different incorporated amounts of Al. AZTO films annealed at 400°C were amorphous. Though SnO2 crystallites were detected in films annealed at temperatures higher than 500°C, the number of crystallites decreased as the Al content increased. Thin films had a smooth and uniform surface morphology with an optical transmittance value higher than 92% in the visible range. Electrical conductivity and its temperature dependence varied markedly according to the amount of Al incorporated in the film. We therefore systematically investigated activation energies for carrier transport for each film composition. Thin-film transistors (TFTs) were fabricated using solution-processed AZTO as an active channel layer. The effects of the amount of Al incorporated in the thin film on TFT characteristics were also evaluated. The best device performance was observed for a TFT with a 5mol%-Al-incorporated AZTO channel. Field effect mobility, subthreshold swing, and on/off ratio were approximately 0.24cm2V−1s−1, 0.69V/dec, and 1.03×106, respectively.