Dislocations in 4H silicon carbide - Li, Jiajun; Yang, Guang; Liu, Xiaoshuang; Luo, Hao; Xu, Lingbo; Zhang, Yiqiang; Cui, Can; Pi, Xiaodong; Yang, Deren; Wang, Rong (Journal of physics. D, Applied physics, 2022)
Keywords: 4H-SiC; dislocations; epitaxial layers; single crystals