Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

• Published in: IEEE electron device letters Vol. 36; no. 3; pp. 232 - 234
• Main Authors: Lee, Finella, Liang-Yu Su, Chih-Hao Wang, Yuh-Renn Wu, Jianjang Huang
• Format: Journal Article
• Language: English
• Published: IEEE 01.03.2015
• Subjects: Aluminum gallium nitride; enhancement mode; Gallium nitride; HEMT; HEMTs; Logic gates; MODFETs; Nickel; threshold voltage; enhancement mode; HEMT; threshold voltage

For conventional GaN-based high electron mobility transistors (HEMTs), the work function of gate metal is critical to electrical parameters, such as OFF-state leakage current, forward operating current, and threshold voltage. A high work function is thus required to maintain Schottky gate contact. I...