Numerical investigation of oxygen impurity distribution during multicrystalline silicon crystal growth using a gas flow guidance device

• Published in: Journal of crystal growth Vol. 360; pp. 12 - 17
• Main Authors: Teng, Ying-Yang, Chen, Jyh-Chen, Lu, Chung-Wei, Chen, Chi-Yung
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2012; Elsevier
• Subjects: A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; Applied sciences; B3. Solar cells; Computational fluid dynamics; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Defects and impurities in crystals; microstructure; Devices; Energy; Exact sciences and technology; Fluid flow; Gas flow; Growth from melts; zone melting and refining; Impurities; Impurities: concentration, distribution, and gradients; Materials science; Melts; Methods of crystal growth; physics of crystal growth; Natural energy; Photovoltaic conversion; Physics; Solar cells. Photoelectrochemical cells; Solar energy; Structure of solids and liquids; crystallography; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Vortices; A1. Heat transfer; A1. Mass transfer; A1. Computer simulation; A1. Impurities; B3. Solar cells; Solar cells; Crystal growth; Impurity distribution; Digital simulation; Growth interface; Polycrystals; Crucibles; Photoinduced effect; Computerized simulation; Mass transfer; Quantity ratio; Growth mechanism; Silicon; Growth from melt; Heat transfer

Oxygen is one of the most important types of impurities that can cause thermal donor or light-induced degradation in mc-Si solar cells. The objective of this study is to investigate the effect that installing a gas flow guidance device in a mc-Si crystal-growth furnace would have on the oxygen impur...