Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

• Published in: Journal of crystal growth Vol. 348; no. 1; pp. 25 - 30
• Main Authors: Zhu, J.J., Fan, Y.M., Zhang, H., Lu, G.J., Wang, H., Zhao, D.G., Jiang, D.S., Liu, Z.S., Zhang, S.M., Chen, G.F., Zhang, B.S., Yang, H.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2012; Elsevier
• Subjects: A1. Diffusion; A3. Metalorganic chemical vapor deposition; Atomic beam spectroscopy; Atomic properties; B1. Nitrides; B2. Semiconducting quaternary alloys; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Diffusion; Exact sciences and technology; Gallium; Gallium nitrides; Materials science; Metalorganic chemical vapor deposition; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Secondary ion mass spectrometry; Secondary ion mass spectroscopy; Theory and models of film growth; B1. Nitrides; B2. Semiconducting quaternary alloys; A1. Diffusion; A3. Metalorganic chemical vapor deposition; Quaternary alloys; Gallium; Epitaxial layers; Epitaxy; Template reaction; Interdiffusion; Secondary ion mass spectrometry; Indium; MOCVD; Gallium nitride; Precursor; III-V compound; Thin films; Growth mechanism; Diffusion; III-V semiconductors

A large amount of Ga atoms, sometimes nominally as high as 45% of the total group III constituents, was found in the AlInN films prepared by metalorganic chemical vapor deposition (MOCVD) under an In-very-rich environment, even when no Ga precursor was introduced. GaN template has been found to be t...