Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
A large amount of Ga atoms, sometimes nominally as high as 45% of the total group III constituents, was found in the AlInN films prepared by metalorganic chemical vapor deposition (MOCVD) under an In-very-rich environment, even when no Ga precursor was introduced. GaN template has been found to be t...
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Published in | Journal of crystal growth Vol. 348; no. 1; pp. 25 - 30 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
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Elsevier B.V
01.06.2012
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Abstract | A large amount of Ga atoms, sometimes nominally as high as 45% of the total group III constituents, was found in the AlInN films prepared by metalorganic chemical vapor deposition (MOCVD) under an In-very-rich environment, even when no Ga precursor was introduced. GaN template has been found to be the main source supplying most of the unexpected Ga atoms during epitaxial growth, of which about 2% might be contributed from other residual Ga-contained sources in the reactor. Secondary ion mass spectroscopy (SIMS) profile measurement shows that atom interdiffusion between In, Al, and Ga atoms is the main path of the high percentage of unexpected Ga atoms incorporating into the AlInN epilayers. A high growth temperature and the H2 added in carrier gas may enhance the Ga atom incorporation into AlIn(Ga)N epilayer by promoting decomposition of GaN template and increasing atom diffusing ability.
► Unexpected Ga atoms were found in AlInN epilayers. ► GaN template was determined to be the source supplying unexpected Ga atoms. ► Unexpected Ga atoms incorporated into AlInN epilayers by atom interduffusion. ► H2 in carrier gas leads to an increased amount of unexpected Ga atoms. |
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AbstractList | A large amount of Ga atoms, sometimes nominally as high as 45% of the total group III constituents, was found in the AlInN films prepared by metalorganic chemical vapor deposition (MOCVD) under an In-very-rich environment, even when no Ga precursor was introduced. GaN template has been found to be the main source supplying most of the unexpected Ga atoms during epitaxial growth, of which about 2% might be contributed from other residual Ga-contained sources in the reactor. Secondary ion mass spectroscopy (SIMS) profile measurement shows that atom interdiffusion between In, Al, and Ga atoms is the main path of the high percentage of unexpected Ga atoms incorporating into the AlInN epilayers. A high growth temperature and the H2 added in carrier gas may enhance the Ga atom incorporation into AlIn(Ga)N epilayer by promoting decomposition of GaN template and increasing atom diffusing ability. A large amount of Ga atoms, sometimes nominally as high as 45% of the total group III constituents, was found in the AlInN films prepared by metalorganic chemical vapor deposition (MOCVD) under an In-very-rich environment, even when no Ga precursor was introduced. GaN template has been found to be the main source supplying most of the unexpected Ga atoms during epitaxial growth, of which about 2% might be contributed from other residual Ga-contained sources in the reactor. Secondary ion mass spectroscopy (SIMS) profile measurement shows that atom interdiffusion between In, Al, and Ga atoms is the main path of the high percentage of unexpected Ga atoms incorporating into the AlInN epilayers. A high growth temperature and the H2 added in carrier gas may enhance the Ga atom incorporation into AlIn(Ga)N epilayer by promoting decomposition of GaN template and increasing atom diffusing ability. ► Unexpected Ga atoms were found in AlInN epilayers. ► GaN template was determined to be the source supplying unexpected Ga atoms. ► Unexpected Ga atoms incorporated into AlInN epilayers by atom interduffusion. ► H2 in carrier gas leads to an increased amount of unexpected Ga atoms. |
Author | Jiang, D.S. Zhang, S.M. Yang, H. Chen, G.F. Lu, G.J. Zhang, B.S. Fan, Y.M. Wang, H. Zhang, H. Liu, Z.S. Zhao, D.G. Zhu, J.J. |
Author_xml | – sequence: 1 givenname: J.J. surname: Zhu fullname: Zhu, J.J. email: jjzhu@semi.ac.cn organization: State Key Laboratory on Integrated Photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China – sequence: 2 givenname: Y.M. surname: Fan fullname: Fan, Y.M. organization: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China – sequence: 3 givenname: H. surname: Zhang fullname: Zhang, H. organization: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China – sequence: 4 givenname: G.J. surname: Lu fullname: Lu, G.J. organization: State Key Laboratory on Integrated Photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China – sequence: 5 givenname: H. surname: Wang fullname: Wang, H. organization: State Key Laboratory on Integrated Photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China – sequence: 6 givenname: D.G. surname: Zhao fullname: Zhao, D.G. organization: State Key Laboratory on Integrated Photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China – sequence: 7 givenname: D.S. surname: Jiang fullname: Jiang, D.S. organization: State Key Laboratory on Integrated Photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China – sequence: 8 givenname: Z.S. surname: Liu fullname: Liu, Z.S. organization: State Key Laboratory on Integrated Photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China – sequence: 9 givenname: S.M. surname: Zhang fullname: Zhang, S.M. organization: State Key Laboratory on Integrated Photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China – sequence: 10 givenname: G.F. surname: Chen fullname: Chen, G.F. organization: School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China – sequence: 11 givenname: B.S. surname: Zhang fullname: Zhang, B.S. organization: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China – sequence: 12 givenname: H. surname: Yang fullname: Yang, H. organization: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, Jiangsu 215123, P. R. China |
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Keywords | B1. Nitrides B2. Semiconducting quaternary alloys A1. Diffusion A3. Metalorganic chemical vapor deposition Quaternary alloys Gallium Epitaxial layers Epitaxy Template reaction Interdiffusion Secondary ion mass spectrometry Indium MOCVD Gallium nitride Precursor III-V compound Thin films Growth mechanism Diffusion III-V semiconductors |
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Snippet | A large amount of Ga atoms, sometimes nominally as high as 45% of the total group III constituents, was found in the AlInN films prepared by metalorganic... |
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SubjectTerms | A1. Diffusion A3. Metalorganic chemical vapor deposition Atomic beam spectroscopy Atomic properties B1. Nitrides B2. Semiconducting quaternary alloys Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science; rheology Diffusion Exact sciences and technology Gallium Gallium nitrides Materials science Metalorganic chemical vapor deposition Methods of deposition of films and coatings; film growth and epitaxy Physics Secondary ion mass spectrometry Secondary ion mass spectroscopy Theory and models of film growth |
Title | Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) |
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