To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method

• Published in: Journal of crystal growth Vol. 363; pp. 25 - 32
• Main Authors: Fang, H.S., Pan, Y.Y., Zheng, L.L., Zhang, Q.J., Wang, S., Jin, Z.L.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.01.2013; Elsevier
• Subjects: A1. Computer simulation; A1. Interface; A1. Stresses; A2. Czochralski method; B1. Sapphire; Cross-disciplinary physics: materials science; rheology; Crystal defects; Crystals; Exact sciences and technology; Growth from melts; zone melting and refining; Insulation; Materials science; Mathematical models; Methods of crystal growth; physics of crystal growth; Physics; Sapphire; Single crystals; Stresses; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Thermal stresses; B1. Sapphire; A1. Computer simulation; A1. Interface; A2. Czochralski method; A1. Stresses; Crystal growth; Liquid solid interface; Growth interface; Theoretical study; Czochralski method; Computerized simulation; Crystal perfection; Monocrystals; Sapphire; Growth mechanism; Stress effects; Modelling; Thermal stresses; Heat transfer; Crystal growth from melts

Global modeling is performed to predict electromagnetic field, heat transfer, melt flow, solid/liquid (S/L) interface shape, and thermal stress during RF-heated Czochralski (Cz) single crystal growth of sapphire. The relations between the convexity of the S/L interface and growth parameters, i.e., c...