Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0°, 0.2°, 0.4° and 0....
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Published in | Journal of crystal growth Vol. 312; no. 9; pp. 1546 - 1550 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
15.04.2010
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1
0
0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0°, 0.2°, 0.4° and 0.6°; 0.4° was found to consistently result in the narrowest peaks, with the optimal spectral purity of ∼4.25
meV found from a 15
nm quantum well. The width of the emission from the 15
nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77
K) electron mobilities up to
μ∼3.5×10
4
cm
2/V
s with an electron concentration of ∼1×10
16. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2010.01.033 |