Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

• Published in: Journal of crystal growth Vol. 312; no. 9; pp. 1546 - 1550
• Main Authors: Young, Robert J., Mereni, Lorenzo O., Petkov, Nikolay, Knight, Gabrielle R., Dimastrodonato, Valeria, Hurley, Paul K., Hughes, Greg, Pelucchi, Emanuele
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.04.2010; Elsevier
• Subjects: A1. Characterization; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Electron mobility; Exact sciences and technology; Indium gallium arsenides; Indium phosphides; Materials science; Methods of crystal growth; physics of crystal growth; Misorientation; Nanoscale materials and structures: fabrication and characterization; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Other topics in nanoscale materials and structures; Photoluminescence; Physics; Quantum wells; Spectra; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; A3. Quantum wells; A3. Metalorganic vapor phase epitaxy; A1. Characterization; B2. Semiconducting III–V materials; Gallium arsenides; Quantum wells; Thick films; Photoluminescence; Line widths; VPE; Silicon additions; Indium arsenides; III-V compound; Indium phosphide; B2. Semiconducting III-V materials; MOVPE method; Optical properties; Growth mechanism; Electron mobility; Angular variation; Carrier density; Nanostructured materials; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.01.033

We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0°, 0.2°, 0.4° and 0.6°; 0.4° was found to consistently result in the narrowest peaks, with the optimal spectral purity of ∼4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to μ∼3.5×10 4 cm 2/V s with an electron concentration of ∼1×10 16.