Non-universal scaling of thermoelectric efficiency in 3D and 2D thermoelectric semiconductors

• Published in: Advances in natural sciences. Nanoscience and nanotechnology Vol. 12; no. 1; p. 15017
• Main Authors: Octavian, Kevin, Hasdeo, Eddwi H
• Format: Journal Article
• Language: English
• Published: Hanoi IOP Publishing 01.03.2021
• Subjects: Band theory; Bismuth tellurides; Dimensional changes; Electrical conductivity; Electrical resistivity; Energy gap; Figure of merit; First principles; Intermetallic compounds; Miniaturization; Semiconductors; Silicon germanides; Thermal conductivity; Thermoelectricity; Two dimensional materials

We performed the first-principles calculation on common thermoelectric semiconductors Bi 2 Te 3 , Bi 2 Se 3 , SiGe, and PbTe in bulk three-dimension (3D) and two-dimension (2D). We found that miniaturisation of materials does not generally increase the thermoelectric figure of merit ( ZT ) according...