Investigation of the annealing effects on the structural and optical properties of sputtered ZnO thin films

• Published in: Journal of crystal growth Vol. 283; no. 3; pp. 384 - 389
• Main Authors: Jung, Mina, Lee, Juyoung, Park, Seungwhan, Kim, Hongseung, Chang, Jiho
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2005; Elsevier
• Subjects: A1. Annealing; A1. Interdiffusion; A1. Microstructure; B1. ZnO; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Transport properties of condensed matter (nonelectronic); 61.10.Kw; A1. Interdiffusion; B1. ZnO; 68.35.Bs; A1. Annealing; A1. Microstructure; Atomic force microscopy; Bl. ZnO; Annealing; Temperature; Inorganic compounds; Surface morphology; Al. Microstructure; Crystals; Transition element compounds; Photoluminescence; Interdiffusion; XRD; Substrates; 61.10.Kw Al. Annealing; Thin films; Zinc oxides; Al. Interdiffusion; Transmission electron microscopy; Optical properties; Surface properties; Silicon
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.06.047

Various effects of annealing on the optical and structural properties of sputtered ZnO layers have been investigated. ZnO layers were sputtered on Si (1 1 1) substrates and annealed at 700–900 °C under H 2O atmosphere. Optical and structural properties along with surface morphologies were estimated by using photoluminescence (PL), X-ray diffraction (XRD), and atomic force microscopy (AFM), respectively. Improvement of crystal quality was observed up to 800 °C, however, it deteriorated at higher annealing temperature due to the enhanced interdiffusion of ZnO layer and Si substrate. Transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) were used to characterize the microstructure of ZnO layers. An amorphous interfacial layer is found owing to strong interdiffusion at the interface, and the reduction of the layer thickness as a result of interdiffusion is observed, which is responsible for the degradation of ZnO layer.