Magnetic and optical properties of Cr +-implanted GaN

• Published in: Journal of crystal growth Vol. 275; no. 3; pp. 393 - 397
• Main Authors: Wang, Jiqing, Chen, Pingping, Guo, Xuguang, Li, Zhifeng, Lu, Wei
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2005; Elsevier
• Subjects: A1. Ion implantation; B2. Diluted magnetic semiconductors; B2. Ferromagnetism; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Magnetic properties and materials; Magnetic semiconductors; Physics; Structure of solids and liquids; crystallography; Studies of specific magnetic materials; 78.55.Cr; 75.70.Ak; 78.20.−e; A1. Ion implantation; B2. Diluted magnetic semiconductors; B2. Ferromagnetism; Temperature dependence; Ion implantation; 78.55.Cr Al. Ion implantation; Inorganic compounds; Magnetization; Gallium nitrides; Thick films; Interference; Photoluminescence; Ferromagnetic materials; 78.20.-e; Binary compounds; Crystal growth from vapors; Experimental study; MOCVD; Magnetic semiconductors; CVD; Acceptor center; Deep level; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.12.005

In this paper, we report the fabrication of ferromagnetic semiconductor on GaN substrates by high-dose Cr ion implantation. Both magnetic and optical properties for Cr +-implanted GaN were studied by photoluminescence and superconducting quantum interference device. The results of photoluminescence reveal that the implanted chromium incorporates substitutionally on Ga site and forms deep acceptor level in GaN. The materials show ferromagnetic-like order up to 300 K as indicated by temperature-dependent magnetization measurement. The M vs. T curve also implies the presence of different components to the magnetization in Cr +-implanted GaN.