Study on the damaging process of silica by in-reactor luminescence

We have carried out in situ luminescence measurements of silica glasses in a fission reactor. In the in-reactor-luminescence (IRL) spectra, the 300-nm band was observed for all the samples and its intensity stayed constant during irradiation. For low-OH fused silica glass, the 400-nm IRL band was al...

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Published inJournal of nuclear materials Vol. 283; pp. 898 - 902
Main Authors Ii, Tatsuya, Yoshida, Tomoko, Tanabe, Tetsuo, Hara, Takanobu, Okada, Moritami, Yamaguchi, Kenji
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2000
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Abstract We have carried out in situ luminescence measurements of silica glasses in a fission reactor. In the in-reactor-luminescence (IRL) spectra, the 300-nm band was observed for all the samples and its intensity stayed constant during irradiation. For low-OH fused silica glass, the 400-nm IRL band was also observed and reduced rapidly with irradiation, while for high-OH fused and synthesized silica glasses, the 450-nm IRL band grew slowly. The comparison with photoluminescence (PL) and electron spin resonance (ESR) spectra showed that the decrease of the 400-nm IRL band reflects the transition of B 2β center to E ′ center by electron excitation by γ-rays, while the growth of the 450-nm IRL band related to defect formation from neutron irradiation. However, single crystal silica showed only a 300-nm IRL band, suggesting that the damaging processes are influenced by the local structure around defects as well as the OH content in silica.
AbstractList We have carried out in situ luminescence measurements of silica glasses in a fission reactor. In the in-reactor-luminescence (IRL) spectra, the 300-nm band was observed for all the samples and its intensity stayed constant during irradiation. For low-OH fused silica glass, the 400-nm IRL band was also observed and reduced rapidly with irradiation, while for high-OH fused and synthesized silica glasses, the 450-nm IRL band grew slowly. The comparison with photoluminescence (PL) and electron spin resonance (ESR) spectra showed that the decrease of the 400-nm IRL band reflects the transition of B 2β center to E ′ center by electron excitation by γ-rays, while the growth of the 450-nm IRL band related to defect formation from neutron irradiation. However, single crystal silica showed only a 300-nm IRL band, suggesting that the damaging processes are influenced by the local structure around defects as well as the OH content in silica.
Author Ii, Tatsuya
Hara, Takanobu
Okada, Moritami
Tanabe, Tetsuo
Yamaguchi, Kenji
Yoshida, Tomoko
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  fullname: Yamaguchi, Kenji
  organization: Nuclear Engineering Research Laboratory, University of Tokyo, Tokaimura, Ibaraki 319-1106, Japan
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