Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters
In this paper we report on recent results on charge trapping and electroluminescence (EL) from Ge rich SiO 2 layers. Thermally grown 80 nm thick SiO 2 layers were implanted with Ge ions at energies of 30– 50 keV to peak concentrations of 1– 6 at %. Subsequently rapid thermal annealing was performed...
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Published in | Physica. E, Low-dimensional systems & nanostructures Vol. 16; no. 3; pp. 499 - 504 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.03.2003
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper we report on recent results on charge trapping and electroluminescence (EL) from Ge rich SiO
2 layers. Thermally grown
80
nm
thick SiO
2 layers were implanted with Ge ions at energies of 30–
50
keV
to peak concentrations of 1–
6
at
%. Subsequently rapid thermal annealing was performed at 1000°C for 6, 30 and
150
s
under a nitrogen atmosphere in order to form luminescence centers. A combination of capacitance–voltage (
CV) and current–voltage (
IV) methods was used for the investigation of the trapping properties. It was found that at electric fields
<8
MV/
cm
electron trapping dominates while at higher electric fields which are typically required for the EL operation of the devices positive charge trapping occurs. It is assumed, that the trapping sites which are responsible for the trapping of the positive charge are in strong relation to the defects causing the luminescence. |
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ISSN: | 1386-9477 1873-1759 |
DOI: | 10.1016/S1386-9477(02)00636-7 |