Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical–chemical vapor transport method

• Published in: Journal of crystal growth Vol. 300; no. 2; pp. 314 - 318
• Main Authors: Fanton, M.A., Li, Q., Polyakov, A.Y., Skowronski, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.03.2007; Elsevier
• Subjects: A1. Point defects; A2. Growth from vapor; A3. Physical vapor deposition processes; B2. Semiconducting silicon compounds; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Defects and impurities: doping, implantation, distribution, concentration, etc; Electron states; Exact sciences and technology; Impurities: concentration, distribution, and gradients; Impurity and defect levels; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Other nonmetals; Physics; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; A1. Point defects; B2. Semiconducting silicon compounds; A3. Physical vapor deposition processes; 68.55.L; 71.55.H; 61.72.S; A2. Growth from vapor; Crystal growth; Charge carriers; Electrical properties; Sublimation; Silicon carbides; Secondary ion mass spectrometry; Experimental study; 61.72.S; 68.55.L; 71.55.H; Non oxide ceramics; CVD; Electrical measurement; Electron traps; Secondary ion mass spectra; Chemical transport; Growth mechanism; Physical vapor deposition; Al. Point defects; A2. Growth from vapor; A3. Physical vapor deposition processes; B2. Semiconducting silicon compounds; Deep energy levels

Concentrations of nitrogen shallow donors, boron shallow acceptors, charge carriers, and electron traps were measured as a function of position along the growth axis in a series of undoped 6H–SiC boules grown by sublimation method with and without addition of hydrogen to the growth atmosphere. Eleme...