Two-dimensional simulation of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers

The performance of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers on the back has been investigated by two-dimensional simulation in comparison with the conventional cell structure having a gap between p/i and n/i layers. The results show t...

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Published inJapanese Journal of Applied Physics Vol. 54; no. 8S1; pp. 8 - 13
Main Authors Noge, Hiroshi, Saito, Kimihiko, Sato, Aiko, Kaneko, Tetsuya, Kondo, Michio
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2015
Subjects
Contact
Electrodes
Heterojunctions
Photovoltaic cells
Silicon
Simulation
Solar cells
Two dimensional
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Abstract The performance of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers on the back has been investigated by two-dimensional simulation in comparison with the conventional cell structure having a gap between p/i and n/i layers. The results show that narrower overlap width leads to higher short circuit current and conversion efficiency, especially for poor heterojunction interface and thinner silicon substrate of the cells in addition to narrower uncovered width of p/i layer by a metal electrode. This is similar to the gap width dependence in the conventional cells, since both overlap and gap act as dead area for diffused excess carriers in the back contacts.
AbstractList The performance of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers on the back has been investigated by two-dimensional simulation in comparison with the conventional cell structure having a gap between p/i and n/i layers. The results show that narrower overlap width leads to higher short circuit current and conversion efficiency, especially for poor heterojunction interface and thinner silicon substrate of the cells in addition to narrower uncovered width of p/i layer by a metal electrode. This is similar to the gap width dependence in the conventional cells, since both overlap and gap act as dead area for diffused excess carriers in the back contacts.
Author Sato, Aiko
Kaneko, Tetsuya
Kondo, Michio
Noge, Hiroshi
Saito, Kimihiko
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SubjectTerms Contact
Electrodes
Heterojunctions
Photovoltaic cells
Silicon
Simulation
Solar cells
Two dimensional
Title Two-dimensional simulation of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers
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