Self‐Expansion Based Multi‐Patterning for 2D Materials Fabrication beyond the Lithographical Limit

• Published in: Small (Weinheim an der Bergstrasse, Germany) Vol. 20; no. 22; pp. e2311209 - n/a
• Main Authors: Borhade, Poonam Subhash, Chen, Tawat, Chen, Ding‐Rui, Chen, Yu‐Xiang, Yao, Yu‐Chi, Yen, Zhi‐Long, Tsai, Chun Hsiung, Hsieh, Ya‐Ping, Hofmann, Mario
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01.05.2024
• Subjects: 2D materials electronics; Diffraction patterns; multi‐patterning; nanosheet transistors; Oxidation; Patterning; self‐expansion double patterning; Semiconductor devices; Silicon transistors; Two dimensional materials; ultra‐scaled devices; nanosheet transistors; ultra-scaled devices; self-expansion double patterning; multi-patterning; 2D materials electronics

Two‐dimensional (2D) materials are promising successors for silicon transistor channels in ultimately scaled devices, necessitating significant research efforts to study their behavior at nanoscopic length scales. Unfortunately, current research has limited itself to direct patterning approaches, wh...