Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference

• Published in: Electronics letters Vol. 49; no. 11; pp. 694 - 696
• Main Authors: Lu, Li, Li, Changzhi
• Format: Journal Article
• Language: English
• Published: Stevenage The Institution of Engineering and Technology 23.05.2013; Institution of Engineering and Technology
• Subjects: amplifiers; Analog circuits; Applied sciences; bipolar transistors; BJT diodes; circuit implementation; Circuit properties; Circuits and systems; detailed analysis; Diodes; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; energy gap; error correction; error statistics; Exact sciences and technology; gain boosting mechanism; gain‐boosted gate‐bulk‐driven error correction amplifier; Integrated circuits; Integrated circuits by function (including memories and processors); low voltage operation; low‐power electronics; low‐voltage sub‐bandgap reference designs; minimised offset error; MOSFET; offset error reduction; reduced offset errors; Schottky barrier diodes; Schottky barriers; semiconductor diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; subthreshold MOSFET; sub‐bandgap circuits; supply sensitivity; Transistors; MOSFET; reduced offset errors; energy gap; subthreshold MOSFET; Schottky barriers; semiconductor diodes; offset error reduction; minimised offset error; gain-boosted gate-bulk-driven error correction amplifier; circuit implementation; amplifiers; bipolar transistors; gain boosting mechanism; low-voltage sub-bandgap reference designs; sub-bandgap circuits; low voltage operation; detailed analysis; Schottky barrier diodes; supply sensitivity; low-power electronics; BJT diodes; error correction; error statistics; MOS technology; Field effect transistor; Low voltage; Operational amplifier; Circuit design; Reference voltage; Error correction; Experimental study; Schottky barrier
• DOI: 10.1049/el.2013.0765
• ISSN: 0013-5194; 1350-911X

Presented is a gain-boosted gate-bulk-driven error correction amplifier with reduced offset errors for low-voltage sub-bandgap reference designs. The method can be applied to sub-bandgap circuits with BJT diodes, subthreshold MOSFETs or Schottky barrier diodes. Detailed analysis and circuit implementation are presented. Low voltage operation has been verified over − 55 to 125 °C. Simulation and measurement results demonstrate the minimised offset error and improved supply sensitivity, which indicates the effectiveness of the proposed gain boosting mechanism.