Reproducible Ultrathin Ferroelectric Domain Switching for High‐Performance Neuromorphic Computing

• Published in: Advanced materials (Weinheim) Vol. 32; no. 7; pp. e1905764 - n/a
• Main Authors: Li, Jiankun, Ge, Chen, Du, Jianyu, Wang, Can, Yang, Guozhen, Jin, Kuijuan
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01.02.2020
• Subjects: Algorithms; Artificial neural networks; Computation; Computer simulation; Electronic devices; electronic synapses; ferroelectric domain switching; Ferroelectric domains; Ferroelectric materials; ferroelectric tunnel junctions; Ferroelectricity; Handwriting recognition; Linearity; Materials science; Memristors; Neural networks; Neuromorphic computing; Resistance; Switching; Synapses; Tunnel junctions; ultrathin films; ultrathin films; ferroelectric domain switching; ferroelectric tunnel junctions; electronic synapses; neuromorphic computing

Neuromorphic computing consisting of artificial synapses and neural network algorithms provides a promising approach for overcoming the inherent limitations of current computing architecture. Developments in electronic devices that can accurately mimic the synaptic plasticity of biological synapses,...