Environmentally Robust Memristor Enabled by Lead‐Free Double Perovskite for High‐Performance Information Storage

• Published in: Small (Weinheim an der Bergstrasse, Germany) Vol. 15; no. 49; pp. e1905731 - n/a
• Main Authors: Cheng, Xue‐Feng, Qian, Wen‐Hu, Wang, Jia, Yu, Chuang, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Chen, Dong‐Yun, Li, Na‐Jun, Lu, Jian‐Mei
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01.12.2019
• Subjects: Bending; double perovskite; Flash memory (computers); Information storage; lead free; memory; Memristors; Nanotechnology; Perovskites; Radiation dosage; resistive random access memory; Robustness; memristors; lead free; memory; double perovskite; resistive random access memory

Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In t...