Achieving Ferroelectricity in a Centrosymmetric High‐Performance Semiconductor by Strain Engineering - Wu, Mengqi; Lou, Zhefeng; Dai, Chen‐Min; Wang, Tao; Wang, Jiaqi; Zhu, Ziye; Xu, Zhuokai; Sun, Tulai; Li, Wenbin; Zheng, Xiaorui; Lin, Xiao (Advanced materials (Weinheim), 2023)
Keywords: Bismuth; bismuth oxyselenide; ferroelectric transition; Ferroelectricity; Harmonic generations; Materials science; Mathematical analysis; memristors; Optoelectronics; Piezoelectricity; Pressure; Semiconductivity; Semiconductors; strain engineering; Switching; memristors; ferroelectric transition; strain engineering; bismuth oxyselenide