APA (7th ed.) Citation

Wu, M., Lou, Z., Dai, C., Wang, T., Wang, J., Zhu, Z., . . . Lin, X. (2023). Achieving Ferroelectricity in a Centrosymmetric High‐Performance Semiconductor by Strain Engineering. Advanced materials (Weinheim), 35(22), e2300450-n/a. https://doi.org/10.1002/adma.202300450

Chicago Style (17th ed.) Citation

Wu, Mengqi, et al. "Achieving Ferroelectricity in a Centrosymmetric High‐Performance Semiconductor by Strain Engineering." Advanced Materials (Weinheim) 35, no. 22 (2023): e2300450-n/a. https://doi.org/10.1002/adma.202300450.

MLA (9th ed.) Citation

Wu, Mengqi, et al. "Achieving Ferroelectricity in a Centrosymmetric High‐Performance Semiconductor by Strain Engineering." Advanced Materials (Weinheim), vol. 35, no. 22, 2023, pp. e2300450-n/a, https://doi.org/10.1002/adma.202300450.