Gate‐Tunable van der Waals Photodiodes with an Ultrahigh Peak‐to‐Valley Current Ratio

• Published in: Small (Weinheim an der Bergstrasse, Germany) Vol. 19; no. 29; pp. e2300010 - n/a
• Main Authors: Zubair, Muhammad, Wang, Hailu, Zhao, Qixiao, Kang, Mengyang, Xia, Mengjia, Luo, Min, Dong, Yi, Duan, Shikun, Dai, Fuxing, Wei, Wenrui, Li, Yunhai, Wang, Jinjin, Li, Tangxin, Fang, Yongzheng, Liu, Yufeng, Xie, Runzhang, Fu, Xiao, Dong, Lixin, Miao, Jinshui
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01.07.2023
• Subjects: 2D materials; Bias; Carrier transport; Electric fields; Heterojunction devices; heterostructures; Infrared detectors; Layered materials; Molybdenum compounds; Nanotechnology; negative differential transconductance; Photodiodes; Photometers; Quantum efficiency; Tellurides; Transconductance; negative differential transconductance; carrier transport; heterostructures; 2D materials

Photodetectors and imagers based on 2D layered materials are currently subject to a rapidly expanding application space, with an increasing demand for cost‐effective and lightweight devices. However, the underlying carrier transport across the 2D homo‐ or heterojunction channel driven by the externa...