Low-temperature diffused p–n junction with nano/microrelief interface for solar cell applications

• Published in: Solar energy materials and solar cells Vol. 137; pp. 124 - 130
• Main Authors: Dmitruk, N.L., Borkovskaya, O.Yu, Korovin, A.V., Mamontova, I.B., Romanyuk, V.R., Sukach, A.V.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2015
• Subjects: Asymptotic properties; Diffusion; Doping; Fluctuation of impurity; GaAs diffused p–n junction; Nano/microrelief interface; Nanostructure; Open-circuit voltage; Optical properties; Photovoltaic cells; Solar cells; Zinc; GaAs diffused p–n junction; Open-circuit voltage; Nano/microrelief interface; Fluctuation of impurity
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2015.01.019

The investigation is aimed at elaboration of technology for submicron p+-GaAs layer formation on micro/nanotextured n-GaAs substrates by using low-temperature (550°C) diffusion of zinc to take the advantage of optical and recombination properties of textured interface for solar cells. Process duration, surface microrelief morphology (dendrite or quasi-grating (grating-like)) and the substrate doping impurity concentration were varied. Optical, photoelectric and electrical properties of p+–n junction were studied to optimize the process conditions. The highest efficiency was obtained in structures with a quasi-grating surface microrelief, substrate doping close to Nd≃1017cm−3 and process duration about 45min. •Technology of diffused GaAs p+-n junction with microrelief interface was elaborated.•Surface microrelief with different morphology was obtained by anisotropic etching.•Optical, photoelectric and electric characterization to optimize low-temperature diffusion.•Theoretical analysis of doping fluctuation effect was performed.•Low-temperature diffusion conditions were optimized for different relief morphologies.