Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN

• Published in: Journal of luminescence Vol. 168; pp. 288 - 292
• Main Authors: Lee, J.W., Shon, Yoon, Subramaniam, N.G., Kwon, Y.H., Kang, T.W., Im, Hyunsik, Kim, H.S., Park, C.S, Kim, E.K., Song, J.D., Koo, H.C., Fu, D.J.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2015
• Subjects: Cathode-luminescence (CL); GaMnN; Photoluminescence (PL); Cathode-luminescence (CL); GaMnN; Photoluminescence (PL)

GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5eV and the electron-Mn pair (e, Mn...