Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN
GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5eV and the electron-Mn pair (e, Mn...
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Published in | Journal of luminescence Vol. 168; pp. 288 - 292 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Elsevier B.V
01.12.2015
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Abstract | GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5eV and the electron-Mn pair (e, Mn) around 3.1eV, and yellow luminescence (YL) around 2.20–2.25eV. Photoluminescence (PL) with 10% of Mn showed the same but enhanced optical transitions as above. However, the new transitions around 1.65eV for the sample with 10% which did not appeared with Mn of 1% were very weakly produced. The results of cathode-luminescence (CL) with 10% of Mn showed transitions related to Mn in PL together with new transitions around 1.72eV. However, the new transitions around 1.72eV for the sample with 10% according to high accelerating voltage were very remarkably activated in contrast with PL transitions which appeared were very weakly produced in samples with Mn of 10%. Transitions around 1.72eV in CL correspond to though around 1.65eV in PL. This result means that deep donor (probably, VN) is detected with increasing accelerating voltage and Mn–VN complex is formed. This is supported by strong electron beam sensitivity of the IR emission bands. It is well known that heavy Mn doping (>∼1019Cm−3) leads to a downshift of the Fermi level and promotes the formation of defect complexes of Mn–VN. In our case, Mn doping concentration is >∼1021Cm−3. Therefore, it is conjectured that the CL transition around 1.72eV corresponds to Mn–VN complex.
•GaN:Mn grown by MBE are profoundly reported.•The new transitions around 1.65eV for the sample with 10% in PL.•The new transitions around 1.72eV for the sample with 10% in CL.•Transitions around 1.72eV in CL correspond to though around 1.65eV in PL.•It is conjectured that the CL transition around 1.72eV corresponds to Mn–VN complex. |
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AbstractList | GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5eV and the electron-Mn pair (e, Mn) around 3.1eV, and yellow luminescence (YL) around 2.20–2.25eV. Photoluminescence (PL) with 10% of Mn showed the same but enhanced optical transitions as above. However, the new transitions around 1.65eV for the sample with 10% which did not appeared with Mn of 1% were very weakly produced. The results of cathode-luminescence (CL) with 10% of Mn showed transitions related to Mn in PL together with new transitions around 1.72eV. However, the new transitions around 1.72eV for the sample with 10% according to high accelerating voltage were very remarkably activated in contrast with PL transitions which appeared were very weakly produced in samples with Mn of 10%. Transitions around 1.72eV in CL correspond to though around 1.65eV in PL. This result means that deep donor (probably, VN) is detected with increasing accelerating voltage and Mn–VN complex is formed. This is supported by strong electron beam sensitivity of the IR emission bands. It is well known that heavy Mn doping (>∼1019Cm−3) leads to a downshift of the Fermi level and promotes the formation of defect complexes of Mn–VN. In our case, Mn doping concentration is >∼1021Cm−3. Therefore, it is conjectured that the CL transition around 1.72eV corresponds to Mn–VN complex.
•GaN:Mn grown by MBE are profoundly reported.•The new transitions around 1.65eV for the sample with 10% in PL.•The new transitions around 1.72eV for the sample with 10% in CL.•Transitions around 1.72eV in CL correspond to though around 1.65eV in PL.•It is conjectured that the CL transition around 1.72eV corresponds to Mn–VN complex. |
Author | Kang, T.W. Fu, D.J. Shon, Yoon Subramaniam, N.G. Im, Hyunsik Park, C.S Kim, E.K. Lee, J.W. Kim, H.S. Koo, H.C. Kwon, Y.H. Song, J.D. |
Author_xml | – sequence: 1 givenname: J.W. surname: Lee fullname: Lee, J.W. organization: Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Republic of Korea – sequence: 2 givenname: Yoon surname: Shon fullname: Shon, Yoon email: sonyun@dongguk.edu organization: Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Republic of Korea – sequence: 3 givenname: N.G. surname: Subramaniam fullname: Subramaniam, N.G. organization: Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Republic of Korea – sequence: 4 givenname: Y.H. surname: Kwon fullname: Kwon, Y.H. organization: Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Republic of Korea – sequence: 5 givenname: T.W. surname: Kang fullname: Kang, T.W. organization: Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Republic of Korea – sequence: 6 givenname: Hyunsik orcidid: 0000-0002-4461-8078 surname: Im fullname: Im, Hyunsik organization: Department of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea – sequence: 7 givenname: H.S. surname: Kim fullname: Kim, H.S. organization: Department of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea – sequence: 8 givenname: C.S surname: Park fullname: Park, C.S organization: Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea – sequence: 9 givenname: E.K. surname: Kim fullname: Kim, E.K. organization: Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea – sequence: 10 givenname: J.D. surname: Song fullname: Song, J.D. organization: Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea – sequence: 11 givenname: H.C. surname: Koo fullname: Koo, H.C. organization: Spin Convergence Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea – sequence: 12 givenname: D.J. surname: Fu fullname: Fu, D.J. organization: Department of Physics, Wuhan University, Wuhan 430072, People's Republic of China |
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Keywords | Cathode-luminescence (CL) GaMnN Photoluminescence (PL) |
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Snippet | GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence... |
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SubjectTerms | Cathode-luminescence (CL) GaMnN Photoluminescence (PL) |
Title | Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN |
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